A kinetic Monte Carlo study on the role of defects and detachment in the formation growth of in chains on Si(100)

Journal of Physics Condensed Matter

Volumn 21, Issue 40, 2009, Pages

  Albao, Marvin A ^a,b   Evans, J W ^c,d   Chuang, Feng Chuan ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b UNIVERSITY OF THE PHILIPPINES LOS BAÑOS   (Philippines)

^c IOWA STATE UNIVERSITY   (United States)

^d IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CHAINS; ATOMISTIC MODELS; EXPERIMENTAL OBSERVATION; HETEROGENEOUS NUCLEATION; HIGH DEFECT DENSITIES; ISLAND SIZE DISTRIBUTION; KINETIC MONTE CARLO; KINETIC MONTE CARLO SIMULATION; MODEL DEVELOPMENT; ROOM TEMPERATURE; SI(1 0 0); SI(100) SURFACE;

ATOMS; COMPUTER SIMULATION; DEFECTS; DIFFUSION BARRIERS; EPITAXIAL GROWTH; MONTE CARLO METHODS; NUCLEATION; RADIATION DAMAGE; SURFACE DIFFUSION;

DEFECT DENSITY;

EID: 70349334514     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/40/405002     Document Type: Article

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