Fabrication of double-dot single-electron transistor in silicon nanowire

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Jo, Mingyu ^a   Kaizawa, Takuya ^a   Arita, Masashi ^a   Fujiwara, Akira ^b   Ono, Yukinori ^b   Inokawa, Hiroshi ^c   Choi, Jung Bum ^d   Takahashi, Yasuo ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b NTT Basic Research Laboratories   (Japan)

^c SHIZUOKA UNIVERSITY   (Japan)

^d Chungbuk National University   (South Korea)

Author keywords

Coulomb blockade; Double dot SETs; Quantum dots; Single electron tunneling

Indexed keywords

DOT FORMATIONS; ELECTRICAL CHARACTERISTIC; MEASUREMENT AND SIMULATION; PATTERN DEPENDENT OXIDATIONS; QUANTUM DOT; QUANTUM DOTS; SI NANOWIRE; SILICON NANOWIRES; SILICON-ON-INSULATOR SUBSTRATES; SIMPLE METHOD; SINGLE ELECTRON TUNNELING; SOI SUBSTRATES;

COULOMB BLOCKADE; ELECTRIC WIRE; ELECTRON TUNNELING; ELECTRONS; NANOWIRES; SEMICONDUCTOR QUANTUM DOTS; SILICON; SUBSTRATES; TRANSIENTS; TUNNELING (EXCAVATION); WIND TUNNELS;

SINGLE ELECTRON TRANSISTORS;

EID: 74049112024     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.085     Document Type: Article

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