Silicon nanodot-array device with multiple gates

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 175-178

  Jo, Mingyu ^a   Kaizawa, Takuya ^a   Arita, Masashi ^a   Fujiwara, Akira ^b   Yamazaki, Kenji ^b   Ono, Yukinori ^b   Inokawa, Hiroshi ^c   Takahashi, Yasuo ^a   Choi, Jung Bum ^d  

^a HOKKAIDO UNIVERSITY   (Japan)

^b NTT Basic Research Laboratories   (Japan)

^c SHIZUOKA UNIVERSITY   (Japan)

^d Chungbuk National University   (South Korea)

Author keywords

Coulomb blockade; Nanodot array; Single electron

Indexed keywords

CAPACITIVE COUPLINGS; DOT ARRAY; GATE VOLTAGES; LOGIC FUNCTIONS; MULTIPLE GATES; MULTIPLE INPUTS; NANO-DOT ARRAYS; NANODOT ARRAY; NANODOTS; NEW CONCEPT; PEAK SHIFT; SILICON ON INSULATOR WAFERS; SINGLE ELECTRON; SINGLE-ELECTRON DEVICES; STRUCTURAL CONFIGURATIONS;

CELLULAR RADIO SYSTEMS; COULOMB BLOCKADE; ELECTRON DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

NANOSTRUCTURED MATERIALS;

EID: 70349779701     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.12.001     Document Type: Article

References (12)

1. Kastner M.A. Artificial atoms. Phys Today 46 (1993) 24-31
2. Meirav U., and Foxman E.B. Single-electron phenomena in semiconductors. Semocond Sci Technol 11 3 (1996) 255-284
3. Wasshuber C., Kosina H., and Selberherr S. A comparative study of single-electron memories. IEEE Trans Electron Devices ED-45 11 (1998) 2365-2371
4. Likharev K.K. Single-electron devices and their applications. Proc IEEE 87 4 (1999) 606-632
5. Takahashi Y., Ono Y., Fujiwara A., and Inokawa H. Silicon single electron devices. J Phys Condens Matter 14 (2002) 995-1033
6. Kaizawa T., Oya T., Arita M., Takahashi Y., and Choi J.-B. Multifunctional device using a nanodot array. Jpn J Appl Phys 45 (2006) 5317-5321
7. Kaizawa T, Arita M, Fujiwara A, Yamazaki K, Ono Y, Inokawa H, et al. Single-electron device using Si nanodot array and multi-input gates. In: Abstract of 2007 silicon nanoelectronics workshop, 2007, 171pp.
8. Takahashi Y., Nagase M., Namatsu H., Kurihara K., Iwadate K., Nakajima Y., et al. Fabrication technique for Si single-electron transistor operating at room temperature. Electron Lett 31 (1995) 136-137
9. Ono Y., Takahashi Y., Yamazaki K., Nagase M., Namatsu H., Kurihara K., et al. Fabrication method for IC-oriented Si single-electron transistors. IEEE Trans Electron Devices ED-47 (2000) 147-153
10. Takahashi Y., Fujiwara A., Yamazaki K., Namatsu H., Kurihara K., and Murase K. Multigate single-electron transistors and their application to an exclusive-OR gate. Appl Phys Lett 76 5 (2000) 637
11. Fujiwara A., Takahashi Y., Yamazaki K., Namatsu H., Nagase M., Kurihara K., et al. Double-Island single-electron devices-an useful unit device for single-electron logic LSI's. IEEE Trans Electron Devices 46 5 (1999) 954
12. Van der Wiel W.G., De Franceschi S., Elzerman J.M., Fujisawa T., Tarucha S., and Kouwenhoven L.P. Electron transport through double quantum dots. Rev Modern Phys 75 (2003) 1