Light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonics crystal

Optics Express

Volumn 17, Issue 26, 2009, Pages 23702-23711

  Huang, Chen Yang ^a,b   Ku, Hao Min ^a   Chao, Shiuh ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR QUANTUM WELLS; SILICON COMPOUNDS; TANTALUM; THREE DIMENSIONAL;

ANGLE OF INCIDENCE; DIFFRACTED LIGHT; ELECTRICAL PROPERTY; ENHANCEMENT MECHANISM; EXPERIMENTAL EVIDENCE; FABRICATION PROCESS; FIRST ORDER; HIGH REFLECTOR; INGAN/GAN; INGAN/GAN MULTI-QUANTUM WELL; LIGHT EXTRACTION; PHOTONICS CRYSTALS; SAPPHIRE WAFER; SURFACE NORMALS;

ELECTRIC PROPERTIES;

GALLIUM; GALLIUM NITRIDE; INDIUM; INDIUM NITRIDE;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; METHODOLOGY; PHOTON; SEMICONDUCTOR;

COMPUTER-AIDED DESIGN; CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; LIGHTING; PHOTONS; SEMICONDUCTORS;

EID: 73949126881     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.023702     Document Type: Article

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