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Volumn 518, Issue 8, 2010, Pages 1914-1919

Ion assistance in epitaxial growth as a strategy to suppress twinning

Author keywords

Ion beam assisted deposition (IBAD); Iridium; Physical vapor deposition (PVD); Scanning tunneling microscopy (STM); Stacking faults

Indexed keywords

ATOMIC LAYERS THICKNESS; FILM SURFACES; GRAZING INCIDENCE; GROWING FILMS; HOMOEPITAXY; ION ASSISTANCE; ION BEAM ASSISTED DEPOSITION (IBAD); IR(111); NORMAL INCIDENCE; SCANNING TUNNELING MICROSCOPY (STM);

EID: 73949111647     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.07.129     Document Type: Article
Times cited : (3)

References (29)
  • 1
    • 0016601554 scopus 로고
    • Matthews J.W. (Ed), Academic Press, New York Ch. 5
    • Stowell M.J. In: Matthews J.W. (Ed). Epitaxial Growth, Part B (1975), Academic Press, New York 437 Ch. 5
    • (1975) Epitaxial Growth, Part B , pp. 437
    • Stowell, M.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.