Stacking faults in homoepitaxy on Ir(111): Detection, evolution with film thickness, and associated defect patterns

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 24, 2008, Pages

  Bleikamp, Sebastian ^a,b   Thoma, Arne ^b,c   Polop, Celia ^b,d   Michely, Thomas ^a  

^a UNIVERSITY OF COLOGNE   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c UNIVERSITY OF KONSTANZ   (Germany)

^d UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 45749128240     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.245424     Document Type: Article

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33. While it is likely that the (111) plane defined by the locations of the fourfold coordinated adsorption sites remains a boundary of one twin crystallite, this is not obvious for the other twin crystallite boundary starting out as a (100) plane. From the STM topographs it appears that the width of the defective area between the two crystallites stays limited to several nanometer even for the thickest deposited films. Thus, the initial (100) facet probably does not stay in this orientation for thicker films.