Carbon nanotube linear bearing nanoswitches

Nano Letters

Volumn 6, Issue 6, 2006, Pages 1092-1095

  Deshpande, V V ^a   Chiu, H Y ^a   Postma, H W Ch ^a   Miko C ^b   Forro L ^b   Bockrath, M ^a  

^a California Institute of Technology   (United States)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GATE VOLTAGE; MULTIWALLED CARBON NANOTUBES (MWNT); NANOELECTROMECHANICAL SWITCHES; NONVOLATILE MEMORY ELEMENT;

ELECTRIC CONDUCTANCE; ELECTRIC INSULATION; ELECTRIC POTENTIAL; ENERGY GAP; FABRICATION; SWITCHES;

CARBON NANOTUBES;

CARBON NANOTUBE;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; FRICTION; INSTRUMENTATION; METHODOLOGY; MICROELECTRODE; NANOTECHNOLOGY; SIGNAL PROCESSING; STATISTICAL MODEL; ULTRASTRUCTURE;

ELECTROCHEMISTRY; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; FRICTION; LINEAR MODELS; MICROELECTRODES; NANOTECHNOLOGY; NANOTUBES, CARBON; SIGNAL PROCESSING, COMPUTER-ASSISTED;

EID: 33745762811     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl052513f     Document Type: Article

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