The ferroelectric MOSFET: A self-consistent quasi-static model and its implications

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 2145-2153

  Sallese, Jean Michel ^a   Meyer, Vincent ^b  

^a EPFL   (Switzerland)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Ferroelectric; Hysteresis; Memory; Metal ferro electric insulator field effect transistor (MFIS FET); MOSFET

Indexed keywords

DATA STORAGE EQUIPMENT; FERROELECTRIC MATERIALS; HYSTERESIS; MATHEMATICAL MODELS; OPTIMIZATION; THRESHOLD VOLTAGE;

FERROELECTRIC MOSFET; QUASI-STATIC MODEL;

MOSFET DEVICES;

EID: 10644229373     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.839113     Document Type: Article

References (13)

1. S. L. Miller and P. J. McWhorter, "Physics of the ferroelectric nonvolatile memory field effect transistor," J. Appl. Phys., vol. 72, no. 12, pp. 5999-6010, 1992.
2. 9/SiN /Si gate structure," IEEE Electron Device Lett., vol. 23, pp. 82-84, Feb. 2002.
3. Y. T. Kim, C. W. Lee, D. S. Shin, and H. N. Lee, "Effect of insulator on memory window of metal-ferroelectric-insulator-semiconductor-field effect transistor (MEFISFET) - non destructive readout memory devices," in Proc. IEEE Int. Symp. Appl. Ferroelect., 1998, pp. 35-38.
4. A. K. Tagantsev, M. Landivar, E. Colla, and N. Setter, " Identification of passive layer in ferroelectric thin films from their switching parameters," J. Appl. Phys., vol. 78, no. 4, pp. 2623-2623, 1995.
5. T. P. Ma and J. P. Han, "Why is nonvolatile ferroelectric memory field-effect transistor still elusive?," IEEE Electron Device Lett. vol. 23, pp. 386-388, Sept. 2002.
6. 6/SiON /Si structures," Jpn. J. Appl. Phys., vol. 40, pp. 2917-2922, 2001.
7. A. K. Tagantsev, I. Stolichnov, and N. Setter, " Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films," Phys. Rev. B, Condens. Matter, vol. 66, pp. 214 109-214 109.
8. J. M. Sallese and A. S. Porret, "A novel approach to charge-based nonquasi-static model of the MOS transistor valid in all modes of operation," Solid State Electron., vol. 44, no. 6, pp. 887-894, 2000.
9. 9-gate FETs and CMOS Schmitt-Trigger oscillators," IEEE Trans. Electron Devices, vol. 47, pp. 1630-1635, Dec. 2000.
10. T. Kamei, E. Tokumitsu, and H. Ishiwara, "Numerical analysis of metal-ferroelectric-semiconductor field effect transistors considering inhomogeneous ferroelectric polarization," IEICE Trans. Electron, vol. E 81c, pp. 577-583, 1998.
11. H. T. Lue, C. J. Wu, and T. Y. Tseng, "Device modeling of ferroelectric memory field-effect transistor," IEEE Trans. Electron Devices, vol. 49, pp. 1790-1798, Nov. 2002.
12. V. Meyer, J. M. Sallese, P. Fazan, D. Bard, and F. Pecheux, " Modeling the polarization in ferroelectric materials: A novel analytical approach," Solid State Electron., vol. 47, pp. 1479-1486, 2003.
13. Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1999.