Micropipe absorption mechanism of pore growth at foreign polytype boundaries in SiC crystals

Journal of Applied Physics

Volumn 106, Issue 12, 2009, Pages

  Gutkin, M Yu ^a,b   Sheinerman, A G ^a   Smirnov, M A ^b   Argunova, T S ^c,d   Je, J H ^d   Nagalyuk, S S ^c   Mokhov, E N ^c  

^a INSTITUTE OF PROBLEMS OF MECHANICAL ENGINEERING   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION MECHANISMS; ELLIPTIC PORES; MICROPIPES; PHASE-SENSITIVE; POLYTYPES; PORE GROWTH; THEORETICAL MODELS;

COALESCENCE; CRYSTALS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

ABSORPTION;

EID: 73849136638     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3266677     Document Type: Article

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