Evolution of domain walls in 6H- and 4H-SiC single crystals

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1187-1191

  Siche, D ^a   Rost, H J ^a   Doerschel, J ^a   Schulz, D ^a   Wollweber, J ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Planar defects; A2. Growth from vapour; A2. Single crystal growth; B2. Semiconducting silicon carbide

Indexed keywords

AGGLOMERATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

MICROPIPE GENERATION;

SINGLE CRYSTALS;

EID: 0036531456     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02154-6     Document Type: Article

References (7)

1. Seeded sublimation bulk growth of single α-SiC