Three-dimensional studies of SiC polytype transformations

Scanning

Volumn 19, Issue 4, 1997, Pages 269-274

  Saparin, G V ^a   Obyden, S K ^a   Ivannikov, P V ^a   Shishkin, E B ^a   Mokhov, E N ^b   Roenkov, A D ^b   Hofmann, D H ^c  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Cathodoluminescence; Epitaxial layers; Polytypism; Scanning electron microscopy; Silicon carbide; Substrates

Indexed keywords

SILICON CARBIDE; SILICON DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; LUMINESCENCE; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY;

EID: 0031396609     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.4950190404     Document Type: Article

References (14)

1. Edmond JA, Kong HC, Carter CH, Jr: Blue LED's, UV-photodiodes and high temperature rectified in 6H SiC. Phys B 185, 264-283 (1993)
2. Fisher GR, Barnes P: Towards a unified view of polytypism in SiC. Phyl Mag B 61, 217-236 (1990)
3. Fissel A, Kaiser U, Ducke E, Schroter B, Richer W: Epitaxial growth of SiC thin films on Si-stabilized SiC (0001) at low temperatures by solid-source molecular beam epitaxy. J Crystal Growth 154, 72-80 (1995)
4. Saparin GV, Obyden SK: Colour display of videoinformation in scanning electron microscopy: Principles and application to physics, geology, soil science, biology, and medicine. Scanning 10, 87-106 (1988)
5. Saparin GV, Obyden SK: Colour in the microworld: Real colour cathodoluminescence mode in scanning electron microscopy. Eur Microsc Anal 22, March, 7-9 (1993)
6. Saparin GV, Obyden SK, Ivannikov PV: A method for the 3D reconstruction of luminescence materials: Principles, data acquisition, image processing. Scanning 17, V-72 (1995)
7. Saparin GV, Obyden SK, Ivannikov PV: A nondestructive method for the 3D reconstruction of luminescence materials: Principles, data acquisition, image processing. Scanning 18, 281-290 (1996b)
8. Saparin GV, Obyden SK, Mokhov EN, Roenkov AD, Akhmedov BA: Polytype transformation in SiC epitaxial layers: The color cathodoluminescence SEM study. Scanning 16, 21-25 (1994)
9. Saparin GV, Obyden SK, Mokhov EN, Roenkov AD: Real color cathodoluminescence scanning electron microscopy: A new effective method for study of SiC materials and devices. Scanning 18, 25-34 (1996a)
10. Sato II, Shinazaki S: Microsyntaxy and polytypism in SiC. Mat Res Bull 9, 679-684 (1974)
11. Tairov VM, Tsvetkov VF: Progress in controlling of the growth of polytypic crystals. Progr Crystal Growth Char 7, 111-162 (1983)
12. Vodakov YA, Mokhov EN, Ramm MG, Roenkov AD: Epitaxial growth of SiC layers by sublimation sandwich-method. Krist und Techn 14, 729-741 (1979)
13. Wyszecki G, Siles W: Color science, concepts and methods. In Quantitative Data and Formulas. John Wiley, New York (1967)
14. Yacobi BG, Holt DB: Cathodoluminescence Microscopy of Inorganic Solids. Plenum Press, New York (1990)