Role of oxygen additive on hydrogen impurity incorporation in nanocrystalline diamond films fabricated by microwave plasma chemical vapor deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 12, 2009, Pages 2816-2821

  Tang, C J ^a,b,c   Gu, L P ^a   Gracio J ^b   Ribeiro, J L ^d  

^a CHANGSHU INSTITUTE OF TECHNOLOGY   (China)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d UNIVERSITY OF MINHO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

BONDED HYDROGEN; CRYSTALLINE QUALITY; DIAMOND SAMPLES; ENHANCEMENT EFFECTS; FT-IR SPECTRUM; GASPHASE; HYDROGEN IMPURITY; INFLUENCE OF OXYGEN; MICRO RAMAN SPECTROSCOPY; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITIONS; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; NANOCRYSTALLINE DIAMOND FILMS; NANOCRYSTALLINES; NCD FILMS; OVERALL QUALITY; OXYGEN ADDITION; OXYGEN ADDITIVES; POLYCRYSTALLINE;

ADDITIVES; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DIAMOND CUTTING TOOLS; DIAMONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GASES; HYDROGEN; MICROWAVES; OXYGEN; PARTIAL DISCHARGES; PLASMA DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

DIAMOND FILMS;

EID: 73849099407     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925147     Document Type: Article

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