The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

Applied Physics Letters

Volumn 95, Issue 26, 2009, Pages

  Kudrawiec, R ^a   Korpijarvi V M ^b   Poloczek, P ^a   Misiewicz, J ^a   Laukkanen, P ^b   Pakarinen, J ^b   Dumitrescu, M ^b   Guina, M ^b   Pessa, M ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CONTACTLESS ELECTROREFLECTANCE; FINE STRUCTURES; GAINNAS; NEAREST-NEIGHBORS; PRESSURE RATIO; QUANTUM WELL; SPECTRAL RANGE;

CRYSTAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITROGEN; RESONANCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 73649136513     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3275712     Document Type: Article

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