SCOPUS 정보 검색 플랫폼

Volumn 92, Issue 23, 2008, Pages

Postgrowth annealing of GaInAs/GaAs and GaInAsN/GaAs quantum well samples placed in a proximity GaAs box: A simple method to improve the crystalline quality

(7) Pakarinen, J a Peng, C S a Puustinen, J a Laukkanen, P a Korpijarvi V M a Tukiainen, A a Pessa, M a

a TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON COMPOUNDS; STEEL ANALYSIS; STRUCTURAL PROPERTIES;

(PL) PROPERTIES; CRYSTALLINE QUALITY; GAINAS/GAAS; OPTICAL (PET) (OPET); POST GROWTH ANNEALING; QUANTUM WELLS; SIMPLE METHODS;

ANNEALING;

EID: 45149113363 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2943157 Document Type: Article

Times cited : (24)

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