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Volumn 76, Issue 24, 2000, Pages 3573-3575

Surface segregation determination by epitaxy temperature steps

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0012010098     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126710     Document Type: Article
Times cited : (7)

References (12)
  • 4
    • 0347094082 scopus 로고    scopus 로고
    • edited by E. F. Schubert Cambridge University Press, Cambridge
    • H. J. Gossmann, in Delta-Doping of Semiconductors, edited by E. F. Schubert (Cambridge University Press, Cambridge, 1996), p. 253.
    • (1996) Delta-doping of Semiconductors , pp. 253
    • Gossmann, H.J.1
  • 7
    • 0346503305 scopus 로고
    • edited by E. Kasper INSPEC, Institution of Electrical Engineers, London
    • H. Jorke, in Properties of Strained and Relaxed Silicon Germanium, edited by E. Kasper (INSPEC, Institution of Electrical Engineers, London, 1995), p. 180.
    • (1995) Properties of Strained and Relaxed Silicon Germanium , pp. 180
    • Jorke, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.