Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Kobayashi, S ^a   Nishi, Y ^b   Saraswat, K C ^b  

^a TOKYO POLYTECHNIC UNIVERSITY   (Japan)

^b Stanford University   (United States)

Author keywords

Chemical vapor deposition; Dislocation; Germanium; Hetero epitaxy; Hydrogen annealing; Silicon

Indexed keywords

ANNEALING TEMPERATURES; EFFECT OF HYDROGEN; GE FILMS; HETEROEPITAXY; HIGH-TEMPERATURE ANNEALING; HYDROGEN ANNEALING; MINIMUM VALUE; SILICON SUBSTRATES; SURFACE UNDULATION; THREADING DISLOCATION DENSITIES;

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; EPITAXIAL FILMS; GERMANIUM; HYDROGEN; METAL ANALYSIS; PRESSURE EFFECTS; SURFACE PROPERTIES; SURFACE ROUGHNESS; TIME DIVISION MULTIPLEXING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 73649084063     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.072     Document Type: Article

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