Initial growth characteristics of germanium on silicon in LPCVD using germane gas

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 686-690

  Kobayashi, S ^a   Sakuraba, M ^b   Matsuura, T ^b   Murota, J ^b   Mikoshiba, N ^a  

^a TOKYO POLYTECHNIC UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

CVD; Epitaxy; GeH4; H termination; Incubation; Si Ge

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; EPITAXIAL GROWTH; FILM GROWTH; GAS ADSORPTION; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTING GERMANIUM;

EID: 0031547233     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00034-1     Document Type: Article

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