Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC

Thin Solid Films

Volumn 518, Issue 6, 2010, Pages 1621-1626

  Frodelius, J ^a   Eklund, P ^a   Beckers, M ^a   Persson, P O A ^a   Hogberg H ^a,b   Hultman, L ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Impact Coatings AB   (Sweden)

Author keywords

Compound target; MAX phase; Physical vapor deposition; Titanium carbide; X ray diffraction

Indexed keywords

AL CONTENT; AS-DEPOSITED FILMS; COMPOUND TARGET; COSPUTTERING; FILM STOICHIOMETRY; FLUX BALANCE; MAX PHASE; PROCESS CHARACTERIZATION; SUBSTRATE TEMPERATURE; SYNTHESIS CONDITIONS; TARGET COMPOSITION; TI CONTENT; TI-AL-C;

COBALT; DIFFRACTION; FILM GROWTH; MASS SPECTROMETRY; PHYSICAL VAPOR DEPOSITION; STOICHIOMETRY; TARGETS; TITANIUM; TITANIUM CARBIDE; X RAY DIFFRACTION;

ALUMINUM;

EID: 73449107173     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.11.059     Document Type: Article

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