Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates

Journal of Crystal Growth

Volumn 304, Issue 1, 2007, Pages 264-269

  Eklund, P ^a   Murugaiah, A ^b   Emmerlich, J ^a   Czigany Zs ^c   Frodelius, J ^a   Barsoum, M W ^b   Hogberg H ^a   Hultman, L ^a  

^a IFM   (Sweden)

^b Drexel University   (United States)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

A1. Scanning electron microscopy; A1. Transmission electron microscopy; A1. X ray diffraction; A3. Physical vapor deposition processes; B1. Carbides; B1. Nanomaterials

Indexed keywords

CARBIDES; EPITAXIAL GROWTH; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; PHYSICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DC MAGNETRON SPUTTERING; FILM COMPOSITION; FILM GRAINS; HOMOEPITAXIAL GROWTH;

THIN FILMS;

EID: 34247620270     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.02.014     Document Type: Article

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