Altering the nucleation of thermally annealed hydrogenated amorphous silicon with laser processing

Applied Physics Letters

Volumn 95, Issue 25, 2009, Pages

  Dabney, M S ^a   Parilla, P A ^a   Gedvilas, L M ^a   Mahan, A H ^a   Ginley, D S ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN FILMS; DEVELOPED MODEL; H-CONTENT; HYDROGENATED AMORPHOUS SILICON; HYDROGENATED AMORPHOUS SILICON (A-SI:H); IN-SITU; INCUBATION TIME; LASER FLUENCES; LASER PROCESSING; NUCLEATION CENTER; THRESHOLD LASERS; X-RAY DIFFRACTION MEASUREMENTS;

AMORPHOUS FILMS; ANNEALING; HYDROGENATION; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS SILICON;

EID: 73449091136     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3259654     Document Type: Article

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14. 2 laser fluence (Fig,) show a similar fractional loss in cluster density.
15. No loss in film H is observed upon multiple laser pulse illumination, suggesting that the momentarily unbonded H must also diffuse and rebond but no longer on clustered H sites.