Excimer laser and rapid thermal annealing stimulation of solid-phase nucleation and crystallization in amorphous silicon films on glass substrates

Journal of Physics Condensed Matter

Volumn 8, Issue 3, 1996, Pages 273-286

  Efremov, M D ^a   Bolotov, V V ^b   Volodin, V A ^a   Fedina, L I ^a   Lipatnikov, E A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b ENERGY SYSTEMS INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000919340     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/8/3/007     Document Type: Article

References (30)

1. Shi G and Seinfeld J H 1991 J. Mater. Res. 6 2091
2. Kashchiev D 1969 Surf. Sci. 14 209
3. Oxtoby D W 1992 J. Phys.: Condens. Matter 4 7627
4. Oxtoby D W 1992 Fundamentals of Inhomogeneous Fluids ed D Henderson (New York: Marcel Dekker) p 407
5. Stiffler S R, Evans P V and Greer A L 1992 Acta Metall. Mater. 40 1617
6. Spaepen F and Turnbull D 1982 Laser Annealing of Semiconductors ed J M Poate and J W Mayer (New York: Academic) p 15
7. Meakin D B, Coxon P A, Migliorato P, Stoemenos J and Economou N A 1987 Appl. Phys. Lett. 50 1894
8. Kakinuma H, Mohri M, Sakamoto M and Tsuruoka T 1991 J. Appl. Phys. 70 7374
9. Nagahara T, Fujimoto K, Kohno N, Koshiwagi Y and Kakinoki H 1992 Japan. J. Appl. Phys. 31 4555
10. Czubatyj W, Beglau D, Chao B S, Gonzales-Hemandez J, Pawlik D A, Clersy P, Jablonski D and Himmler R 1991 J. Vac. Sci. Technol. A 9 294
11. Czubatyj W, Beglau D, Himmler R, Jablonski D and Guha S 1989 IEEE Electron Devices Lett. 10 349
12. Kakkad R, Liu G and Fonash S J 1989 J. Non-Cryst. Solids 115 66
13. Liu G and Fonash S J 1989 Appl. Phys. Lett. 55 660
14. Sameshima T and Usui S 1991 J. Appl. Phys. 70 1281
15. Kuriyama H, Kuwahara T, Ishida S, Nohda T, Sano K, Iwata H, Noguchi S and Kuwano S 1992 Japan. J. Appl. Phys. 31 4550
16. Choi D-H, Shimizu K, Sugiura O and Matusmura M 1992 Japan. J. Appl. Phys. 31 4545
17. Miyata Y, Furuta M, Yoshioka T and Kawamura T 1992 Japan. J. Appl. Phys. 31 4559
18. Kuriyama H, Kiyama S, Noguchi S, Kuwahara T, Ishida S, Nohda T, Sano K, Iwata H, Kawata H, Osumi M, Tsuda S, Nakano S and Kuwano Y 1991 Japan. J. Appl. Phys. 30 3700
19. Bolotov V V, Efremov M D, Volodin V A, Lipatnikov E A, Fedina L I and Neizvestnij I G 19- Technical Report of the Institute of Semiconductor Physics sent to Samsung Advanced Institute of Technology October 1992
20. Bolotov V V, Efremov M D, Fedina L I, Lipatnikov E A, Volodin V A and Neizvestnij I G 1993 Abstracts Spring Meet. Materials Research Society-93 (San Francisco, CA, 1993) p A9.54
21. Beeman D, Tsu R and Thorpe M F 1985 Phys. Rev. B 32 874
22. Alben R, Weaire D, Smith J E Jr and Brodsky M H 1975 Phys. Rev. B 11 2271
23. Hishikawa Y 1987 J. Appl. Phys. 62 3150
24. Kanelis G, Morhange J F and Balkanski M 1980 Phys. Rev. B 21 1543
25. Cheng G-X, Xia H, Chen K-J, Zhang W and Zhang X-K 1990 Phys. Status Solidi a 118 K51
26. Tsu R, Gonzales-Hernandes J, Chao S S, Lee S C and Tanaka K 1982 Appl. Phys. Lett. 40 534
27. Okada T, Iwaki T, Kasahara H and Yamamoto K 1985 Japan. J. Appl. Phys. 24 161
28. Bustarret E, Hachicha M A and Brunei M 1988 Appl. Phys. Lett. 52 1675
29. Suzuki M, Hiramoto M, Oguiura M, Kamisaka W and Hasegawa S 1988 Japan. J. Appl. Phys. 27 L1380
30. Bolotov V V, Efremov M D and Volodin V A 1994 Thin Solid Films 248 212