Kinetics of laser-induced low-temperature crystallization of amorphous silicon

Applied Physics Letters

Volumn 81, Issue 18, 2002, Pages 3347-3349

  Khait, Yu L ^a   Beserman, R ^a   Chack, A ^a   Weil, R ^a   Beyer, W ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY FLUCTUATION; EXPERIMENTAL OBSERVATION; HYDROGENATED SILICON; LASER INDUCED; LASER-INDUCED CRYSTALLIZATION; LOW-TEMPERATURE CRYSTALLIZATION; NANO SCALE; NANOMETER MATERIAL; PICOSECONDS; THEORETICAL STUDY; THERMAL CRYSTALLIZATION;

CONVOLUTION; KINETICS;

AMORPHOUS SILICON;

EID: 79956038735     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516875     Document Type: Article

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