500GHz cutoff frequency SiGe HBTs

Electronics Letters

Volumn 43, Issue 14, 2007, Pages 774-775

  Zerounian, N ^a   Aniel, F ^a   Barbalat, B ^b   Chevalier, P ^c   Chantre, A ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b STMICROELECTRONICS   (Italy)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; ELECTRIC CURRENT CONTROL; GAIN MEASUREMENT; THERMAL EFFECTS; TOPOLOGY;

MAXIMUM PERFORMANCES; OPERATING TEMPERATURE; ROOM TEMPERATURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34547626791     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20070994     Document Type: Article

References (7)

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2. Chevalier, P., Fellous, C., Rubaldo, L., Pourchon, F., Pruvost, S., Beerkens, R., Saguin, F., Zerounian, N., Barbalat, B., Lepilliet, S., Dutartre, D., Céli, D., Telliez, I., Gloria, D., Aniel, F., Danneville, F., and Chantre, A.: ' 230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications ', IEEE Solid-State Circuits, 2005, 40, (10), p. 2025-2034 10.1109/JSSC.2005.852846
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6. Zerounian, N., Rodriguez, M., Enciso, M., Aniel, F., Chevalier, P., Martinet, B., and Chantre, A.: ' Transit times of SiGe:C HBTs using non selective base epitaxy ', Solid-State Electron, 2004, 48, (10-11), p. 1993-1999 0038-1101
7. Sunderland, D.A., and Dapkus, P.D.: ' Optimizing n-p-n and p-n-p heterojunction bipolar transistors for speed ', IEEE Trans. Electron Devices, 1987, 34, (2), p. 367-377 0018-9383