Experimental cryogenic modeling and noise of SiGe HBTs

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2008, Pages 459-462

  Bardin, Joseph C ^a   Weinreb, Sander ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Cryogenic; Low noise amplifier (LNA); Noise parameters; Silicon germanium (SiGe); Transistor modeling

Indexed keywords

AMPLIFIERS (ELECTRONIC); AUDIO FREQUENCY AMPLIFIERS; CRYOGENICS; GERMANIUM; LOW NOISE AMPLIFIERS; MICROWAVES; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS;

CRYOGENIC; EQUIVALENT CIRCUIT MODELS; FIGURE OF MERITS; LOW NOISE AMPLIFIER (LNA); LOW NOISES; MODELING RESULTS; NOISE PARAMETERS; NOISE PERFORMANCES; NOISE TEMPERATURES; PERFORMANCE ENHANCEMENTS; SIGE DEVICES; SIGE HBT; SIGE HBTS; SILICON-GERMANIUM (SIGE); SMALL SIGNALS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 57349114104     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2008.4633202     Document Type: Conference Paper

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