Impact of negative and positive bias temperature stress on 6T-SRAM cells

Advances in Radio Science

Volumn 7, Issue , 2009, Pages 191-196

  Drapatz, S ^a,b   Georgakos, G ^b   Schmitt Landsiedel, D ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC-CELLS; DEGRADATION EFFECT; HIGH-K GATE OXIDE; NEGATIVE BIAS TEMPERATURE INSTABILITY; POSITIVE BIAS TEMPERATURE INSTABILITIES; POSITIVE BIAS TEMPERATURES; PRODUCTION VARIATIONS; SRAM DESIGN;

LOGIC DESIGN;

STATIC RANDOM ACCESS STORAGE;

EID: 77952606633     PISSN: 16849965     EISSN: 16849973     Source Type: Journal    
DOI: 10.5194/ars-7-191-2009     Document Type: Article

References (6)

1. Antreich, K. J., Graeb, H. E., and Wieser, C. U.: Circuit analysis and optimization driven by worst-case distances, IEEE T. Comput. Aid. D., 13(1), 57-71, 1994.
2. Fischer, Th., Olbrich, A., Georgakos, G., Lemaitre, B., and Schmitt-Landsiedel, D.: Impact of Process Variations and long-term degradation on 6T-SRAM cells, Adv. Radio Sci., 2007.
3. Fischer, Th., Amirante, E., Hofmann, K., Ostermayr, M., Huber, P., and Schmitt-Landsiedel, D.: A 65nm teststructure for the analysis of NBTI induced statistical variations in SRAM transistors, Proceedings of the European Solid State device research conference, 51-54, 2008.
4. Heinrigs, W., Reisinger, H., Gustin, W., and Schluender, C.: Consideration of revocery effects during NBTI measurements for accurate lifetime predictions of state-of-the-art pMOSFETs Reliability physics symposium, 288-292, 2007.
5. Seevinck, E., List, F., and Lohstroh, J.: Static Noise Margin Analysis of MOS SRAM Cells, IEEE J. Solid-St. Circ., 22, 748-754, 1987.
6. Zafar, S., Kim, Y. H., Narayanan, V., et al.: A comparative study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates, Proceeding of the Symposium on VLSI Technology, 23-25, 2006.