The charge trapping and memory effect in SiO2 thin films containing Ge nanocrystals

Journal of Physics D: Applied Physics

Volumn 43, Issue 1, 2010, Pages

  Ang, R ^a,b   Chen, T P ^a   Yang, M ^a   Wong, J I ^a   Yi, M D ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGING TIME; ELECTRON TRAPPING; FLAT-BAND VOLTAGE SHIFT; GATE VOLTAGES; GE DISTRIBUTION; GE NANOCRYSTALS; HOLE TRAPPING; MEMORY EFFECTS; NEGATIVE GATE VOLTAGES;

ELECTRON TRAPS; GERMANIUM; ION BOMBARDMENT; ION IMPLANTATION; NANOCRYSTALS; SILICON COMPOUNDS; THIN FILMS;

CHARGE TRAPPING;

EID: 72449179946     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/1/015102     Document Type: Article

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