Electron transport in extremely scaled SiGe HBTs

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2009, Pages 67-74

  Hong, S M ^a   Jungemann, C ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Boltzmann equation; SiGe HBT; Spherical harmonics expansion

Indexed keywords

ELECTRON TRANSPORT; NANO SCALE; PHYSICS-BASED; QUASI-BALLISTIC; SIGE HBTS; SPHERICAL HARMONICS EXPANSION; SPHERICAL HARMONICS EXPANSIONS;

HARMONIC ANALYSIS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS;

BOLTZMANN EQUATION;

EID: 72449160711     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2009.5314141     Document Type: Conference Paper

References (26)

1. M. Khater, J.-S. Rieh, T. Adam, A. Chinthakindi, J. Johnson, R. Krishnasamy, M. Meghelli, F. Pagette, D. Sanderson, C. Schnabel, K. T. Schonenberg, P. Smith, K. Stein, A. Stricker, S.-J. Jeng, D. Ahlgren, and G. Freeman, "SiGe HBT technology with fmax/fT = 350/300 GHz and gate delay below 3.3 ps", IEEE Tech. Dig. IEDM, pp. 247-250, 2004.
2. A. Fox, B. Heinemann, R. Barth, D. Bolze, J. Drews, U. Haak, D. Knoll, B. Kuck, R. Kurps, S. Marschmeyer, H. H. Richter, H. Rücker, P. Schley, D. Schmidt, B. Tillack, G. Weidner, C. Wipf, D. Wolansky, and Y. Yamamoto, "SiGe HBT module with 2.5ps gate delay", IEEE Tech. Dig. IEDM, pp. 731-734, 2008.
3. Y. Shi and G. Niu, "Vertical profile design and transit time analysis of nano-scale SiGe HBTs for terahertz fT", Proc. BCTM, pp. 213-216, 2004.
4. Y. Shi and G. Niu, "2-d analysis of device parasitics for 800/1000 GHz fT/fmax SiGe HBT", Proc. BCTM, pp. 252-255, 2005.
5. S. E. Laux and M. V. Fischetti, "Monte-Carlo simulation of submicrometer Si n-MOSFET's at 77 and 300 K", IEEE Electron Device Lett., vol. 9, no. 9, pp. 467-469, 1988.
6. R. Thoma, A. Emunds, B. Meinerzhagen, H. J. Peifer, and W. L. Engl, "Hydrodynamic equations for semiconductors with nonparabolic bandstructures", IEEE Trans. Electron Devices, vol. 38, no. 6, pp. 1343-1352, 1991.
7. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation, Springer, Wien, 1989.
8. C. Jungemann and B. Meinerzhagen, Hierarchical Device Simulation: The Monte-Carlo Perspective, Computational Microelectronics. Springer, Wien, New York, 2003.
9. C. Jungemann, B. Neinhüs, and B. Meinerzhagen, "Comparative study of electron transit times evaluated by DD, HD, and MC device simulation for a SiGe HBT", IEEE Trans. Electron Devices, vol. 48, no. 10, pp. 2216-2220, 2001.
10. C. Jungemann, B. Neinhüs, S. Decker, and B. Meinerzhagen, "Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices: Part II - Results", IEEE Trans. Electron Devices, vol. 49, no. 7, pp. 1258-1264, 2002.
11. C. Jungemann and B. Meinerzhagen, "In-advance CPU time analysis for stationary Monte Carlo device simulations", IEICE Trans. on Electronics, vol. E86-C, no. 3, pp. 314-319, 2003.
12. A. Gnudi, D. Ventura, G. Baccarani, and F. Odeh, "Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation", Solid-State Electron., vol. 36, no. 4, pp. 575-581, 1993.
13. C. Jungemann, A.-T. Pham, B. Meinerzhagen, C. Ringhofer, and M. Bollhöfer, "Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle", J. Appl. Phys., vol. 100, pp. 024502-1-13, 2006.
14. C. Jungemann, "A deterministic approach to RF noise in silicon devices based on the Langevin Boltzmann equation", IEEE Trans. Electron Devices, vol. 54, no. 5, pp. 1185-1192, 2007.
15. S.-M. Hong and C. Jungemann, "Investigation of noise performance of SiGe HBTs by deterministic simulation of Boltzmann equation in two-dimensional real space", International Conference on Noise in Physical Systems and 1/f Fluctuations, Pisa (Italy), 2009.
16. R. Brunetti, C. Jacoboni, F. Nava, L. Reggiani, G. Bosman, and R. J. J. Zijlstra, "Diffusion coefficient of electrons in silicon", J. Appl. Phys., vol. 52, pp. 6713-6722, 1981.
17. F. M. Bufler, "Full-Band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe", Dissertation, Universität Bremen, Bremen, 1997, (H. Utz Verlag Wissenschaft, München: 1998).
18. R. Thoma, H. J. Peifer, W. L. Engl, W. Quade, R. Brunetti, and C. Jacoboni, "An improved impactionization model for high-energy electron transport in Si with Monte Carlo simulation", J. Appl. Phys., vol. 69, pp. 2300-2311, 1991.
19. B. Neinhüs, S. Decker, P. Graf, F. M. Bufler, and B. Meinerzhagen, "Consistent hydrodynamic and Monte-Carlo simulation of SiGe HBTs based on table models for the relaxation times", VLSI Design, vol. 8, pp. 387-391, 1998.
20. A. G. Chynoweth, "Ionization rates for electrons and holes in silicon", Phys. Rev., vol. 109, no. 5, pp. 1537-1540, 1958.
21. R. K. Mains, G. I. Haddad, and P. A. Blakey, "Simulation of GaAs IMPATT diodes including energy and velocity transport equations", IEEE Trans. Electron Devices, vol. 30, no. 10, pp. 1327-1337, 1983.
22. W. Maes, K. de Meyer, and R. Van Overstraeten, "Impact ionization in silicon: A review and update", Solid-State Electron., vol. 33, pp. 705-718, 1990.
23. J. J. H. van den Biesen, "A simple regional analysis of transient times in bipolar transistors", Solid-State Electron., vol. 29, pp. 529-534, 1986.
24. C. Jungemann, B. Meinerzhagen, S. Decker, S. Keith, S. Yamaguchi, and H. Goto, "Is physically sound and predictive modeling of NMOS substrate currents possible?", Solid-State Electron., vol. 42, pp. 647-655, 1998.
25. G. Niu, J. D. Cressler, S. Zhang, W. E. Ansley, C. S. Webster, and D. L. Harame, "A unified approach to RF and microwave noise parameter modeling in bipolar transistors", IEEE Trans. Electron Devices, vol. 48, pp. 2568-2574, 2001.
26. S.-M. Hong and C. Jungemann, "A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion",' submitted to Journal of Computational Electronics.