Optimization of transistors for very high frequency dc-dc converters

2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009

Volumn , Issue , 2009, Pages 1590-1602

  Sagneri, Anthony D ^a   Anderson, David I ^b   Perreault, David J ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

Class inverter; Class E inverter; Class F power amplifier; Harmonic peaking; Resonant boost converter; Resonant dc dc converter; Resonant gate drive; Resonant rectifier; Self oscillating gate drive; Very high frequency; VHF integrated power converter

Indexed keywords

CLASS E INVERTER; CLASS F POWER AMPLIFIER; HARMONIC PEAKING; RESONANT BOOST CONVERTER; RESONANT DC-DC CONVERTER; RESONANT GATE DRIVE; RESONANT RECTIFIER; SELF-OSCILLATING GATE DRIVE; VERY HIGH FREQUENCY; VHF INTEGRATED POWER CONVERTER;

CONTROL SYSTEM STABILITY; DC-DC CONVERTERS; ELECTRIC CONVERTERS; ENERGY CONVERSION; HETEROJUNCTION BIPOLAR TRANSISTORS; HVDC POWER TRANSMISSION; MOS DEVICES; OPTIMIZATION; POWER AMPLIFIERS; RESONANT CIRCUITS; SOFT SWITCHING;

ELECTRIC RECTIFIERS;

EID: 72449160570     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2009.5316121     Document Type: Conference Paper

References (15)

1. J. M. Rivas, Y. Han, O. Leitermann, A. D. Sagneri, and D. J. Perreualt, "A high-frequency resonant inverter topology with low-voltage stress," IEEE Transactions on Power Electronics, vol. 23, pp. 1759-1771, July 2008.
2. J. Hu, A. D. Sagneri, J. M. Rivas, S. M. Davis, and D. J. Perreault, "High frequency resonant sepic converter with wide input and output voltage ranges," in Power Electronics Specialist Conference Proceedings 2008, June 2008.
3. R. C. N. Pilawa-Podgurski, A. D. Sagneri, J. M. Rivas, D. I. Anderson, and D. J. Perreault, "Very-high-frequency resonant boost converters," IEEE Transactions on Power Electronics, vol. 24, pp. 1654-1665, 2009.
4. Z. Parpia and C. A. T. Salama, "Optimization of RESURF LDMOS transistors: An analytical approach," IEEE Transactions on Electron Devices, vol. Vol. 37, pp. 789-796, March 1990.
5. T. Biondi, G. Greco, M. C. Allia, S. F. Liotta, G. Bazzano, and S. Rinaudo, "Distributed modeling of layout parasitics in large-area highspeed silicon power devices," IEEE Transactions on Power Electronics, vol. Vol. 22, pp. 1847-1856, September 2007.
6. V. O'Donovan, S. Whiston, A. Deignan, and C. N. Chleirigh, "Hot carrier reliability of lateral dmos transistors," in 38th Annual International Reliability Physics Symposium, 2000.
7. R. C. N. Pilawa-Podgurski, A. D. Sagneri, J. M. Rivas, D. I. Anderson, and D. J. Perreault., "Very high frequency resonant boost converters," in Power Electronics Specialists Conference, (Orlando, FL), June 2007.
8. D. J. Perreault, J. Hu, J. M. Rivas, Y. Han, O. Leitermann, R. C. N. Pilawa-Podgurski, A. D. Sagneri, and C. R. Sullivan, "Opportunities and challenges in very high frequency power conversion," in To be published in the proceedings of the Applied Power Electronics Conference and Exposition, 2009.
9. J. Rivas, J. Shafran, R. Wahby, and D. Perreault, "New architectures for radio-frequency dc/dc power conversion," IEEE Transactions on Power Electronics, vol. 21, pp. 380-393, March 2006.
10. N. O. Sokal, "Class-E RF Power Amplifiers," QEX, pp. 9-20, Jan/Feb 2001.
11. A. Hastings, The Art of Analog Layout. Pearson, Prentice Hall, 2006.
12. D. Brisbin, P. Lindorfer, and P. Chaparala, "Anomalous safe operating area and hot carrier degredation of nldmos devices," Device and Materials Reliability, IEEE Transactions on, vol. Vol. 6, No.3, pp. 364-370, 2006.
13. P. Moens, J. Mertens, F. Bauwens, P. Joris, W. D. Ceuninck, and M. Tack, "A compreshensive model for hot carrier degredation in ldmos transistors," in IEEE 45th Annual International Reliability Physics Symposium, 2007.
14. P. Moens, G. V. den Bosch, C. D. Keukeleire, R. Degraeve, M. Tack, and G. Groeseneken, "Hot hole degredation effects in lateral ndmos transistors," Electron Devices, IEEE Transactions on, vol. Vol. 51, No. 10, pp. 1704-1710, 2004.
15. K. Kinoshita, Y. Kawaguchi, and A. Nakagawa, "A new adaptive resurf concept for 20v ldmos without breakdown voltage degredation at high current," in Proceedings of International Symposium on Power Semiconductors & ICs, (Kyoto), 1998.