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Volumn 37, Issue 3, 1990, Pages 789-796

Optimization Of Resurf Ldmos Transistors: An Analytical Approach

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION--APPLICATIONS;

EID: 0025403853     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.47787     Document Type: Article
Times cited : (80)

References (16)
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    • Plummer, J.D.1    Meindl, J.D.2
  • 2
    • 0018714042 scopus 로고
    • High voltage thin layer devices (RESURF devices)
    • J. A. Appels and H. M. J. Vaes, “High voltage thin layer devices (RESURF devices),” in IEDM Tech. Dig., 1979, pp. 238-241.
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    • Appels, J.A.1    Vaes, H.M.J.2
  • 3
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    • Effects of drift region parameters on the static properties of power LDMOST
    • S. Colak, “Effects of drift region parameters on the static properties of power LDMOST,” IEEE Trans. Electron Devices, Vol. ED-28, pp. 1455-1466, 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , pp. 1455-1466
    • Colak, S.1
  • 4
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    • A computer-aided design model for high-voltage double diffused MOS (DMOS) transistors
    • M. D. Pocha and R. W. Dutton, “A computer-aided design model for high-voltage double diffused MOS (DMOS) transistors,” IEEE J. Solid-State Circuits, Vol. SC-11, pp. 718-726, 1976.
    • (1976) IEEE J. Solid-State Circuits , vol.SC-11 , pp. 718-726
    • Pocha, M.D.1    Dutton, R.W.2
  • 5
    • 0018443438 scopus 로고
    • Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitors
    • A. Rusu and C. Bulucea, Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitors,” IEEE Trans. Electron Devices, Vol. ED-26, pp. 201-205, 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 201-205
    • Rusu, A.1    Bulucea, C.2
  • 6
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    • Relation between oxide thickness and the breakdown voltage of a planar junction with field relief electrode
    • V. P. O'Neil and P. G. Alonas, “Relation between oxide thickness and the breakdown voltage of a planar junction with field relief electrode,” IEEE Trans. Electron Devices, Vol. ED-26, pp. 1098-1100, 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 1098-1100
    • O'Neil, V.P.1    Alonas, P.G.2
  • 7
    • 0024016396 scopus 로고
    • The contour of an optimal field plate-An analytical approach
    • K.-P. Brieger, E. Falck, and W. Gerlach, “The contour of an optimal field plate-An analytical approach,” IEEE Trans. Electron Devices, Vol. 35, pp. 684-688, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 684-688
    • Brieger, K.-P.1    Falck, E.2    Gerlach, W.3
  • 8
    • 0001899874 scopus 로고
    • Surface breakdown in silicon planar diodes equipped with field plate
    • F. Conti and M. Conti, “Surface breakdown in silicon planar diodes equipped with field plate,” Solid-State Electron., Vol. 15, 1972.
    • (1972) Solid-State Electron , vol.15
    • Conti, F.1    Conti, M.2
  • 10
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    • R. Van Overstraeten and H. De Man, “Measurement of the ionization rates in diffused silicon p-n junctions,” Solid-State Electron., Vol. 13, 1970.
    • (1970) Solid-State Electron , vol.13
    • Van Overstraeten, R.1    De Man, H.2
  • 11
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    • A novel CMOS-compatible high-voltage transistor
    • Dec
    • Z. Parpia, J. G. Mena, and C. A. T. Salama, “A novel CMOS-compatible high-voltage transistor,” IEEE Trans. Electron Devices, Vol. ED-33, pp. 1948-1952, Dec. 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 1948-1952
    • Parpia, Z.1    Mena, J.G.2    Salama, C.A.T.3
  • 15
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    • J. G. Mena and C. A. T. Salama, “High-voltage multiple-resistivity drift-region LDMOS,” Solid-State Electron., Vol. 29, pp. 647-656, 1986.
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    • Mena, J.G.1    Salama, C.A.T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.