780nm oxidised vertical-cavity surface-emitting lasers with Al0.11Ga0.89As quantum wells

Electronics Letters

Volumn 32, Issue 14, 1996, Pages 1287-1288

  Shin, H E ^a   Ju, Y G ^a   Shin, J H ^a   Ser, J H ^a   Kim, T ^b   Lee, E K ^c   Kim, I ^c   Lee, Y H ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Oxidation; Semiconductor junction lasers

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; LASER MODES; LIGHT EMISSION; MASKS; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

CHEMICALLY ASSISTED ION BEAM ETCHING; DISTRIBUTED BROGG REFLECTORS; INDEX GUIDING EFFECT; THERMAL LENSING; VERTICAL CAVITY SURFACE EMITTING LASERS; WALLPLUG EFFICIENCY; WET OXIDATION;

SEMICONDUCTOR LASERS;

EID: 0030568635     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960833     Document Type: Article

References (5)

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2. MACDOUGAL, M.H., ZHAO, H., DAPKUS, P.D., ZIARI, M., and STEIER, W.H.: 'Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers', Electron. Lett., 1994, 30, pp. 1147-1148
3. LEAR, K.L., CHOQUETTE, K.D., SCHNEIDER, R.P., KILCOYNE, S.P., and GEIB, K.M.: 'Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency', Electron. Lett., 1995, 31, pp. 208-209
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