Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 63-67

  Fukutani, K ^a   Kanbe, M ^a   Futako, W ^a   Kaplan, B ^a   Kamiya, T ^a   Fortmann, C M ^a   Shimizu, I ^a  

^a Tokyo Institute of Technology ^*  (Japan)

Author keywords

Band gap; Chemical annealing; Substrate temperature

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ARGON; CHEMICAL BONDS; DEPOSITION; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HYDRIDES; RELAXATION PROCESSES; SUBSTRATES;

BAND GAP TUNING; STRUCTURAL RELAXATION;

AMORPHOUS SILICON;

EID: 0032066070     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00022-2     Document Type: Article

References (8)

1. W. Futako, K. Yoshino, C.M. Fortmann, I. Shimizu, to be published.
2. W. Futako, I. Shimizu, C.M. Fortmann, Mat. Res. Soc. Symp. Proc. 420 (1996) 431.
3. N. Nakamura, K. Yoshino, S. Takeoka, I. Shimizu, Jpn. J. Appl. Phys. 34 (1994) 442.
4. G.D. Cody, B. Abeles, C.R. Wronski, R.B. Stephens, B. Brooks, Solar Cells 2 (1980) 227.
5. M. Wakagi, PhD Thesis, Tokyo Institute of Technology, The Graduate School, Yokohama 227, Japan, 1996.
6. N.F. Mott, E.A. Davis, Electronic Processes in Non-crystalline Materials, 2nd edn., Oxford Univ. Press, London, 1979, p. 272.
7. K. Yoshino, W. Futako, Y. Wasai, I. Shimizu, Mater. Res. Soc. Symp. Proc. 420 (1996) 335.
8. C.M. Fortmann, Deposition conditions and the electronic properties of amorphous silicon alloys, in: G. Bruno, P. Capezzuto, A. Madan (Eds.), Plasma Deposition of Amorphous Silicon, Chap. 3, Academic Press, NY, 1995, p. 131.