Co-doping effect of Ca and N on the structure and properties of CuAlO 2 thin film

Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

  Dong, Guobo ^a   Zhang, Ming ^a   Li, Tingxian ^a   Yan, Hui ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BURSTEIN-MOSS SHIFT; CA-DOPED; CO-DOPING EFFECTS; DOPING CONCENTRATION; ELECTRICAL CONDUCTIVITY; HALL MEASUREMENTS; NITROGEN PLASMA TREATMENT; P-TYPE CONDUCTION; RADIO-FREQUENCY-MAGNETRON SPUTTERING; STRUCTURE AND PROPERTIES; X-RAY DIFFRACTION MEASUREMENTS;

BIOACTIVITY; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; PLASMA APPLICATIONS; THIN FILM DEVICES; THIN FILMS;

CALCIUM;

EID: 72249122999     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3258659     Document Type: Article

References (35)

1. H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, and H. Hosono, Nature (London) 0028-0836, 389, 939 (1997). 10.1038/40087 (Pubitemid 27485678)
2. T. Dittrich, L. Dloczik, T. Guminskaya, M. C. Lux-Steiner, N. Grigorieva, and I. Urban, Appl. Phys. Lett. 0003-6951, 85, 742 (2004). 10.1063/1.1776611
3. B. Mahrov, G. Boschloo, A. Hagfeldt, L. Dloczik, and T. Dittrich, Appl. Phys. Lett. 0003-6951, 84, 5455 (2004). 10.1063/1.1767961
4. K. Tonooka, H. Bando, and Y. Aiura, Thin Solid Films 0040-6090, 445, 327 (2003). 10.1016/S0040-6090(03)01177-5
5. X. G. Zheng, K. Taniguchi, A. Takahashi, Y. Liu, and C. N. Xu, Appl. Phys. Lett. 0003-6951, 85, 1728 (2004). 10.1063/1.1784888
6. A. N. Banerjee, R. Maity, P. K. Ghosh, and K. K. Chattopadhyay, Thin Solid Films 0040-6090, 474, 261 (2005). 10.1016/j.tsf.2004.08.117
7. H. Yanagi, S. Inoue, K. Ueda, H. Kawazoe, H. Hosono, and N. Hamada, J. Appl. Phys. 0021-8979, 88, 4159 (2000). 10.1063/1.1308103
8. A. N. Banerjee, C. K. Ghosh, and K. K. Chattopadhyay, Sol. Energy Mater. Sol. Cells 0927-0248, 89, 75 (2005). 10.1016/j.solmat.2005.01.003 (Pubitemid 41013911)
9. Y. Wang and H. Gong, Adv. Mater. CVD, 6, 285 (2000). 10.1002/1521- 3862(200011)6:6<285::AID-CVDE285>3.0.CO;2-K
10. W. Lan, M. Zhang, G. B. Dong, P. M. Dong, Y. Y. Wang, and H. Yan, Mater. Sci. Eng., B 0921-5107, 139, 155 (2007). 10.1016/j.mseb.2007.01.045 (Pubitemid 46669924)
11. P. M. Dong, M. Zhang, G. B. Dong, X. P. Zhao, and H. Yan, J. Electrochem Soc., 155, H319 (2008). 10.1149/1.2884858
12. M. S. Lee, T. Y. Kim, and D. Kim, Appl. Phys. Lett. 0003-6951, 79, 2028 (2001). 10.1063/1.1405809
13. W. Lan, M. Zhang, G. B. Dong, Y. Y. Wang, and H. Yan, J. Mater. Res. 0884-2914, 22, 3338 (2007). 10.1557/jmr.2007.0437
14. G. B. Dong, M. Zhang, X. P. Zhao, Y. C. Li, and H. Yan, J. Cryst. Growth 0022-0248, 311, 1256 (2009). 10.1016/j.jcrysgro.2009.01.004
15. R. S. Yu, S. C. Liang, C. J. Lu, D. C. Tasi, and F. S. Shieu, Appl. Phys. Lett. 0003-6951, 90, 191117 (2007). 10.1063/1.2679233 (Pubitemid 46738073)
16. R. Kykyneshi, B. C. Nielsen, J. Tate, J. Li, and A. W. Sleight, J. Appl. Phys. 0021-8979, 96, 6188 (2004). 10.1063/1.1806256 (Pubitemid 44938183)
17. R. Nagarajan, A. D. Draeseke, A. W. Sleight, and J. Tate, J. Appl. Phys. 0021-8979, 89, 8022 (2001). 10.1063/1.1372636
18. M. K. Jayaraj, A. Draeseke, J. Tate, and A. W. Sleight, Thin Solid Films 0040-6090, 397, 244 (2001). 10.1016/S0040-6090(01)01362-1 (Pubitemid 32975746)
19. G. B. Dong, M. Zhang, W. Lan, P. M. Dong, and H. Yan, Vacuum 0042-207X, 82, 1321 (2008). 10.1016/j.vacuum.2008.04.010
20. H. Katayama-Yoshida, T. Koyanagi, H. Funashima, H. Harima, and A. Yanase, Solid State Commun. 0038-1098, 126, 135 (2003). 10.1016/S0038-1098(02)00875-X
21. T. Koyanagi, H. Harima, A. Yanase, and H. Katayama-Yoshida, J. Phys. Chem. Solids 0022-3697, 64, 1443 (2003). 10.1016/S0022-3697(03)00078-7
22. T. Ishiguro, A. Kitazawa, N. Mizutani, and M. Kato, J. Solid State Chem. 0022-4596, 40, 170 (1981). 10.1016/0022-4596(81)90377-7 (Pubitemid 12500919)
23. M. L. Liu, F. Q. Huang, L. D. Chen, and Y. M. Wang, Appl. Phys. Lett. 0003-6951, 90, 072109 (2007). 10.1063/1.2591415 (Pubitemid 46280695)
24. G. Haacke, J. Appl. Phys. 0021-8979, 47, 4086 (1976). 10.1063/1.323240
25. A. Sivasankar Reddy, P. Sreedhara Reddy, S. Uthanna, and G. Mohan Rao, J. Mater. Sci.: Mater. Electron. 0957-4522, 17, 615 (2006). 10.1007/s10854-006- 0007-2 (Pubitemid 44111268)
26. F. Demichelis, G. Kaniadakis, A. Tagliaferro, and E. Tresso, Appl. Opt. 0003-6935, 26, 1737 (1987). 10.1364/AO.26.001737
27. H. Hiramatsu, W. S. Seo, and K. Koumoto, Chem. Mater. 0897-4756, 10, 3033 (1998). 10.1021/cm980173b
28. E. Burstein, Phys. Rev. 0096-8250, 93, 632 (1954). 10.1103/PhysRev.93.632
29. B. Saha, R. Thapa, and K. K. Chattopadhyay, Solid State Commun. 0038-1098, 145, 33 (2008). 10.1016/j.ssc.2007.10.001 (Pubitemid 350122627)
30. Y. Yan and S. B. Zhang, Phys. Rev. Lett. 0031-9007, 86, 5723 (2001). 10.1103/PhysRevLett.86.5723 (Pubitemid 32583143)
31. M. L. Tu, Y. K. Su, and C. Y. Ma, J. Appl. Phys. 0021-8979, 100, 053705 (2006). 10.1063/1.2337766 (Pubitemid 44422054)
32. Y. Nakano, T. Morikawa, T. Ohwaki, and Y. Taga, Appl. Phys. Lett. 0003-6951, 88, 172103 (2006). 10.1063/1.2198489
33. A. Kudo, H. Yanagi, H. Hosono, and H. Kawazoe, Appl. Phys. Lett. 0003-6951, 73, 220 (1998). 10.1063/1.121761 (Pubitemid 128673732)
34. S. Park and D. A. Keszler, Appl. Phys. Lett. 0003-6951, 80, 4393 (2002). 10.1063/1.1485133 (Pubitemid 34720501)
35. M. L. Liu, L. B. Wu, F. Q. Huang, L. D. Chen, and I. W. Chen, J. Appl. Phys. 0021-8979, 102, 116108 (2007). 10.1063/1.2817643 (Pubitemid 350262184)