Optimizing annealing steps for crystalline silicon solar cells with screen printed front side metallization and an oxide-passivated rear surface with local contacts

Progress in Photovoltaics: Research and Applications

Volumn 17, Issue 8, 2009, Pages 554-566

  Kontermann, S ^a   Wolf, A ^a   Reinwand, D ^a   Grohe, A ^a   Biro, D ^a   Preu, R ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Post metallization annealing; Rear passivation; Screen print metallization; Silicon solar cells

Indexed keywords

BACK SURFACE FIELDS; CELL PERFORMANCE; CRYSTALLINE SILICON SOLAR CELLS; CZOCHRALSKI SILICON; FILL FACTOR; HIGHER EFFICIENCY; INDUSTRIAL SOLAR CELLS; METALLIZATIONS; MINORITY CARRIER LIFETIMES; ONE-DIMENSIONAL SIMULATIONS; OPTIMIZED PROCESS; POST-METALLIZATION ANNEALING; REAR SIDE; REAR SURFACES; SCREEN PRINT; SCREEN-PRINTED; SURFACE RECOMBINATION VELOCITIES; THERMAL OXIDATION;

ALUMINUM; ANNEALING; BIOINFORMATICS; CARRIER LIFETIME; CELLS; METALLIZING; OPTIMIZATION; PASSIVATION; PNEUMATIC CONTROL EQUIPMENT; SCREEN PRINTING; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; SOLAR CELLS;

SILICON WAFERS;

EID: 72149097379     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.919     Document Type: Article

References (40)

1. Schneiderlöchner E, Grohe A, Fleischhauer B, Hofmann M, Glunz SW, Preu R, Willeke G. Status and advancement in transferring the laser-fired contact technology to screen-printed silicon solar cells. Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Barcelona, Spain, 2005; 785-788.
2. 2. Schneiderlöchner E, Preu R, Lüdemann R, Glunz SW. Laser-fired rear contacts for crystalline silicon solar cells. Progress in Photovoltaics; Research and Applications 2002; 10: 29-34. (Pubitemid 34133757)
3. 3. Aberle AG. Surface passivation of crystalline silicon solar cells: a review. Progress in Photovoltaics: Research and Applications 2000; 8: 473-487. (Pubitemid 32018624)
4. Snel J. The doped Si/SiO2 interface. Solid State Electronics 1981; 24: 135-1.39.
5. Kontermann S, Grohe A, Erath D, Preu R, Willeke G. Investigations on the influence of different annealing Steps on silicon solar cells with silver thick film contacts. Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2007; 1556-1559.
6. 6. Rohatgi A, Narasimha S, Ebong AU, Doshi P. Understanding and implementation of rapid thermal technologies for high-efficiency silicon solar cells. IEEE Transactions on Electron Devices 1999; 46: 1970-1977. (Pubitemid 30523980)
7. Glunz S. Diploma Thesis, Albert-Ludwigs-Universität Freiburg i. B., 1991.
8. Schubert G. Dissertation Thesis, Universität Konstanz, 2006.
9. Sinton RA, Cuevas A, Stuckings M. Quasi-steady-state photoconductance, a new method for solar cell material and device characterization. Proceedings of the 25th IEEE Photovoltaic Specialists Conference, Washington DC, USA, 1996; 457-460.
10. 10. Sinton RA, Cuevas A. Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data. Applied Physics Letters 1996; 69: 2510-2512. (Pubitemid 126595545)
11. Grupp G, Biro D, Emanuel G, Preu R, Schitthelm F, Willeke G. Analysis of silver thick-film contact formation on industrial silicon solar cells. Proceedings of the 31st IEEE Photovoltaics Specialists Conference, Orlando, FL, USA, 2005; 927-930.
12. Schubert G, Horzel J, Ohl S. Investigations on the mechanism behind the beneficial effect of a forming gas anneal on solar cells with silver thick film contacts. Proceedings of the 21st European Photovoltaic Solar Energy Conference, Dresden, Germany, 2006; 1460-1466.
13. Ballif C, Huljic DM, Willeke G, Hessler-Wyser A. Silver thick-film contacts on highly doped n-type silicon emitters: structural and electronic properties of the interface. Applied Physics Letters 2003; 82: 1878-1880.
14. Hilali MM, To B, Rohatgi. A. A review and. understanding of screen-printed contacts and selective-emitter formation. Proceedings of the 14th Workshop on Crystalline Silicon Solar Cells and Modules NREL, Winter Park, Colorado, USA, 2004; 109-116.
15. Kontermann S, Grohe A, Preu R. Detailed analysis of annealing silver front side contacts on silicon solar cells. Proceedings of the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, USA, 2008; 441-444.
16. Hiraki A, Lugujjo E, Nicolet MA, Mayer JW. Lowtemperature migration of silicon through metal films importance of silicon-metal interface. Physica Status Solidi A 1971; 79: 401-406.
17. Weber L. Equilibrium solubility of silicon in silver. Metallurgical and Materials Transactions A 2002; 33A: 1145-1150.
18. 18. Chen L, Zeng Y, Nyugen P, Alford TL. Silver diffusion and defect formation in Si (111) substrate at elevated temperatures. Materials Chemistry and Physics 2002; 76: 224-227. (Pubitemid 34524774)
19. Würfel P. Physics of Solar Cells. Wiley: Weinheim, Germany, 2005.
20. Dunn GJ. Effect of an Al overlayer on interface states in poly-Si gate MOS capacitors. IEEE Electron Device Letters 1989; 10: 333-335.
21. Grove AS. Physics and Technology of Semiconductor Devices. John Wiley & Sons, Inc.: New York, 1967.
22. 2-Si structures. Journal of the Electrochemical Society 1969; 116: 997-1005.
23. 2 interface trap annealing. Journal of Applied Physics 1988; 63: 5776-5793.
24. Aberle AG. Crystalline silicon solar cells: advanced surface passivation and analysis of crystalline silicon solar cells, University of New South Wales. Sydney, Australia, 1999.
25. Granek F, Hermle M, Fleischhauer B, Grohe A, Schultz O, Glunz SW, Willeke G. Optimisation of laser-fired aluminium, emitters for high efficiency n-type Si solar cells. Proceedings of the 21st European Photovoltaic Solar Energy Conference, Dresden, Germany, 2006; 777-780.
26. Sproul AB. Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors. Journal of Applied Physics 1994; 76: 2851-2854.
27. Stocks M, Cuevas A. Surface recombination velocity of thermally oxidised multicrystalline silicon. Proceedings of the 2nd World Conference on Photovoltaic Energy Conversion, Vienna, Austria, 1998; 1623-1626.
28. Rein S. Diploma thesis, Universität Freiburg, 1998.
29. Schmidt J, Bothe K. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon. Physical Review B (Condensed Matter) 2004; 69: 0241071-0241078.
30. 30. Glunz SW, Rein S, Lee JY, Warta W. Minority carrier lifetime degradation in boron-doped Czochralski silicon. Journal of Applied Physics 2001; 90: 2397-2404. (Pubitemid 33600658)
31. Knobloch J, Glunz SW, Biro D, Warta W, Schäffer E, Wettling W. Solar cells with efficiencies above 21% processed from Czochralski grown silicon. Proceedings of the 25th IEEE Photovoltaic Specialists Conference, Washington DC, USA, 1996; 405-408.
32. Dicker J. Dissertation Thesis, Universität Konstanz, 2003.
33. Goetzberger A, Voß B, Knobloch J. Sonnenenergie: Photovoltaik. Teubner Studienbücher Physik: Stuttgart, 1994.
34. Isenberg J, van der Heide ASH, Warta W. Spatially resolved assessment of power losses due to bulk material quality and metallization problems. Proceedings of the 31st IEEE Photovoltaic Specialist Conference, Orlando, Florida, USA, 2005; 907-910.
35. Hornbeck JA, Haynes JR. Trapping of minority carriers in silicon. I, P-type silicon. Physical Review 1955; 97: 311321.
36. 36. Basore PA. Numerical modeling of textured silicon solar cells using PC-1D. Proceedings of the 21st IEEE Photovoltaic Specialists Conference, Kissimmee, FA, USA, 1990; 337-343. (Pubitemid 20666230)
37. Fischer B. Dissertation Thesis, Universität Konstanz, 2003.
38. Green MA. Solar Cells: Operating Principles, Technology and System Applications. University of New South Wales: Sydney, 1998.
39. Schultz O, Mette A, Hermle M, Glunz SW. Thermal, oxidation for crystalline silicon solar cells exceeding 19% efficiency applying industrially feasible process technology. Progress in Photovoltaics: Research and Applications 2008; 16: 317-324.
40. 40. Cuevas A, Macdonald D. Measuring and interpreting the lifetime of silicon wafers. Solar Energy 2004; 76: 255-262. (Pubitemid 38047639)