Above threshold spectral dependence of linewidth enhancement factor, optical duration and linear chirp of quantum dot lasers

Optics Express

Volumn 17, Issue 25, 2009, Pages 22566-22570

  Kim, Jimyung ^a   Delfyett, Peter J ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LINEWIDTH; NANOCRYSTALS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS;

ANTI-STOKES; LINEAR CHIRP; LINEWIDTH ENHANCEMENT FACTOR; MODE-LOCKED LASER; PERFORMANCE CHARACTERISTICS; PULSE TRAIN; SPECTRAL DEPENDENCES; TEMPORAL DURATIONS;

QUANTUM DOT LASERS;

QUANTUM DOT;

ARTICLE; COMPUTER AIDED DESIGN; EQUIPMENT; EQUIPMENT DESIGN; LASER;

COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LASERS; QUANTUM DOTS;

EID: 72049112084     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.022566     Document Type: Article

References (20)

1. R. Dingle, and C. H. Henry, U.S. Patent 3,983,302 (1976).
2. Y. Arakawa, and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett. 40(11), 939-941 (1982).
3. O. B. Shchekin, and D. G. Deppe, "1.3 μ m InAs quantum dot laser with T0=161 K from 0 to 80 °C," Appl. Phys. Lett. 80(18), 3277-3279 (2002).
4. M. Asada, Y. Miyamoto, and Y. Suematsu, "Gain and the Threshold of Three-Dimensional Quantum-Box Lasers," IEEE J. Quantum Electron. 22(9), 1915-1921 (1986).
5. M. Osinski, and J. Buus, "Linewidth Broadening Factor in Semiconductor Lasers-An Overview," IEEE J. Quantum Electron. 23(1), 9-29 (1987).
6. A. A. Ukhanov, A. Stintz, P. G. Eliseev, and K. J. Malloy, "Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers," Appl. Phys. Lett. 84(7), 1058-1060 (2004).
7. B. Dagens, A. Markus, J. X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, "Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot laser," Electron. Lett. 41(6), 323-324 (2005).
8. A. V. Uskov, E. P. O?Reilly, D. McPeake, N. N. Ledenstov, D. Bimberg, and G. Huyet, "Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states," Appl. Phys. Lett. 84(2), 272-274 (2004).
9. J. Molina Vázquez, and H. H. Nilsson, J.-Z, Zhang, and I. Galbraith, "Linewidth Enhancement Factor of Quantum-Dot Optical Amplifiers," IEEE J. Quantum Electron. 42(10), 986-993 (2006).
10. J. Oksanen, and J. Tulkki, "Linewidth enhancement factor and chirp in quantum dot lasers," J. Appl. Phys. 94(3), 1983-1989 (2003).
11. S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, "Linewidth Enhancement Factor in InGaAs Quantum-Dot Amplifiers," IEEE J. Quantum Electron. 40(10), 1423-1429 (2004).
12. C. H. Henry, N. A. Olsson, and N. K. Dutta, "Locking Range and Stability of Injection Locked 1.54 μ m InGaAsP Semiconductor Lasers," IEEE J. Quantum Electron. 21(8), 1152-1156 (1985).
13. I. Petitbon, P. Gallion, G. Debarge, and C. Chabran, "Locking Bandwidth and Relaxation Oscillations of an Injection-Locked Semiconductor Laser," IEEE J. Quantum Electron. 24(2), 148-154 (1988).
14. G. Liu, X. Jin, and S. L. Chuang, "Measurement of Linewidth Enhancement Factor of Semiconductor Lasers Using an Injection-Locking Technique," IEEE Photon. Technol. Lett. 13(5), 430-432 (2001).
15. L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, "Optical Characteristics of 1.24-μ m InAs Quantum-Dot Laser Diodes," IEEE Photon. Technol. Lett. 11(8), 931-933 (1999).
16. A. Markus, J. X. Chen, C. Paranthoën, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82(12), 1818-1820 (2003).
17. P. J. Delfyett, Y. Silberberg, and G. A. Alphonse, "Hot-carrier thermalization induced self-phase modulation in semiconductor travelling wave amplifiers," Appl. Phys. Lett. 59(1), 10-12 (1991).
18. S. Gee, R. Coffie, P. J. Delfyett, G. Alphonse, and J. Connolly, "Intracavity gain and absorption dynamics of hybrid modelocked semiconductor lasers using multiple quantum well saturable absorbers," Appl. Phys. Lett. 71(18), 2569-2571 (1997).
19. J. Kim, M. T. Choi, and P. J. Delfyett, "Pulse generation and compression via ground and excited states from a grating coupled passively mode-locked quantum dot two-section diode laser," Appl. Phys. Lett. 89(26), 261106 (2006).
20. O. E. Martinez, "3000 Times Grating Compressor with Positive Group Velocity Dispersion: Application to Fiber Compensation in 1.3-1.6 μ m Region," IEEE J. Quantum Electron. 23(1), 59-64 (1987).