Surface activation for low temperature wafer fusion bonding by radicals produced in an oxygen discharge

Sensors and Actuators, A: Physical

Volumn 155, Issue 1, 2009, Pages 145-151

  Kowal, J ^a   Nixon, T ^a   Aitken, N ^b   Braithwaite, N St J ^a  

^a OPEN UNIVERSITY   (United Kingdom)

^b Applied Microengineering Limited   (United Kingdom)

Author keywords

Activation; Electron spectroscopy; Fluorine; Plasma; Radical; Silicon; Surface science; Wafer bonding; XPS

Indexed keywords

BOND STRENGTH; COMPARATIVE ANALYSIS; DIRECT PLASMA; DIRECT TREATMENT; ENERGETIC ION; FLUORINE PLASMA; GAS DISCHARGE; GAS-DISCHARGE PLASMAS; LOW TEMPERATURES; MESH ELECTRODES; ON-WAFER; OXYGEN PLASMA ACTIVATION; PROCESS LATITUDES; RADICAL; SILICON SURFACES; STRONG ELECTRIC FIELDS; SURFACE ACTIVATION; SURFACE-ROUGHENING; TREATMENT DURATION; WAFER FUSION; WAFER SURFACE; XPS;

BOND STRENGTH (CHEMICAL); ELECTRIC FIELDS; ELECTRON SPECTROSCOPY; FLUORINE; GAS DISCHARGE TUBES; GLOW DISCHARGES; OXYGEN; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE ROUGHNESS; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

WAFER BONDING;

EID: 72049092274     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2009.08.018     Document Type: Article

References (22)

1. Ma W., Li G., Zohar Y., and Wong M. Fabrication and packaging of inertia micro-switch using low-temperature photo-resist molded metal-electroplating technology. Sens. Actuators A 111 1 (2004) 63-70
2. Manz A., Graber N., and Widmer H.M. Miniaturized total chemical analysis systems: a novel concept for chemical sensing. Sens. Actuators B 1 (1990) 244-248
3. Brigel R., Ashauer M., Ashauer A., Sandmeier H., and Lang W. Anisotropic conductive adhesion of microsensors applied in the instance of a low pressure sensor. Sens. Actuators A 97-98 (2002) 323-328
4. Mescheder U., and Majer S. Micromechanical inclinometer. Sens. Actuators A 60 (1997) 134-138
5. Pasquariello D., Hedlund C., and Hjort K. Oxidation and induced damage in oxygen plasma in situ wafer bonding. J. Electrochem. Soc. 147 7 (2000) 2699-2703
6. Farrens S.N., Dekker J.R., Smith J.K., and Roberds B.E. Chemical free room temperature wafer to wafer direct bonding. J. Electrochem. Soc. 142 11 (1995) 3949-3955
7. Takagi H., Maeda R., Chung T.R., and Suga T. Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method. Sens. Actuators A 70 (1998) 164-170
8. N.St.J. Braithwaite, J. Al-Kuzee, J. Kowal, Semiconductor Bonding Techniques, Patent application number GB0609167.2 (2006).
9. 2 near STP. Atmos. Environ. 32 6 (1998) 1111-1127
10. Kennard E.H. Kinetic Theory of Gases (1938), McGraw-Hill, New York p. 193
11. 2 rf discharge structure in parallel plates reactor at 13.56 MHz for material processing. J. Appl. Phys. 77 12 (1995) 6181-6188
12. Weschler C.J. Ozone in indoor environments: concentration and chemistry. Indoor Air 10 4 (2000) 269-288
13. Shepelenko A.A. Estimates of maximal concentrations of singlet delta oxygen in a DC discharge. High Temp. 45 4 (2007) 439-445
14. Napartovich A.P., Deryugin A.A., and Kochetov I.V. Discharge production of the singlet delta oxygen for an iodine laser. J. Phys. D: Appl. Phys. 34 (2001) 1827-1833
15. Ferriera C.M., and Gousset G. A consistent model of the low-pressure oxygen positive column. J. Phys. D: Appl. Phys. 24 (1991) 775-778
16. Piejak R.B., Al-Kuzee J., and Braithwaite N.St.J. Hairpin resonator probe measurements in RF plasmas. Plasma Sources Sci. Technol. 14 4 (2005) 734-743
17. Maszara W.P., Goetz G., Caviglia A., and McKitterick J.B. Bonding of silicon wafers for silicon-on-insulator. J. Appl. Phys. 64 10 (1988) 4943-4950
18. Tretheway D., and Aydil E.S. Modeling of heat transport and wafer heating effects during plasma etching. J. Electrochem. Soc. 143 11 (1996) 3674-3680
19. Brozek T., Li X., Preuninger F., Chan Y.D., and Viswanathan C.R. Assessment of uniform and non-uniform damage in plasma etched submicron transistors. Proc. Int. Symp. on VLSI Technology, Systems, and Applications. Taipei, Taiwan ROC, May 31-June 2 (1995) 53-56
20. Tong Q.Y., and Gösele U. Semiconductor Wafer Bonding: Science and Technology (1999), Wiley, New York
21. Tong Q.Y., Lee T.H., Gösele U., Reiche M., Ramm J., and Beck E. The role of surface chemistry in bonding of standard silicon wafers. J. Electrochem. Soc. 144 1 (1997) 384-389
22. Zhang R.Q., Zhao Y.L., and Teo B.K. Fluorination-induced back-bond weakening and hydrogen passivation on HF-etched Si surfaces. Phys. Rev. B 69 12 (2004) 125319-125326