β-Al2xGa2-2xO3 thin film growth by molecular beam epitaxy

Japanese Journal of Applied Physics

Volumn 48, Issue 7 PART 1, 2009, Pages

  Oshima, Takayoshi ^a   Okuno, Takeya ^a   Arai, Naoki ^b   Kobayashi, Yasushi ^b   Fujita, Shizuo ^a  

^a KYOTO UNIVERSITY   (Japan)

^b Nippon Light Metal Company Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; CARRIER ACCUMULATION; HETERO INTERFACES; HIGH POWER APPLICATIONS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SINGLE-CRYSTAL SUBSTRATES; STEP-FLOW GROWTH;

ALUMINUM; CRYSTAL GROWTH; GALLIUM; GALLIUM ALLOYS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR QUANTUM WIRES; THIN FILMS;

FILM GROWTH;

EID: 72049083213     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.070202     Document Type: Article

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