Atomically controlled surfaces with step and terrace of β-Ga 2 O 3 single crystal substrates for thin film growth

Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7838-7842

  Ohira, Shigeo ^a   Arai, Naoki ^a   Oshima, Takayoshi ^b   Fujita, Shizuo ^b  

^a Nippon Light Metal Company Ltd   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

AFM; RHEED; Step and terrace structure; Ga 2 O 3

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTAL SURFACES; SINGLE CRYSTALS; SUBSTRATES;

ATOMICALLY SMOOTH SURFACE; CHEMICAL MECHANICAL POLISHING(CMP); FLOATING ZONE METHOD; HIGH QUALITY EPITAXIAL FILMS; MISORIENTATION ANGLE; OXYGEN ATMOSPHERE; SINGLE CRYSTAL SUBSTRATES; STEP-AND-TERRACE STRUCTURES;

FILM GROWTH;

EID: 51249084374     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.184     Document Type: Article

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