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Physical Review Letters

Volumn 101, Issue 1, 2008, Pages

Electronic transport properties of the ising quantum hall ferromagnet in a Si quantum well

(5) Toyama, Kiyohiko a Nishioka, Takahisa a Sawano, Kentarou b Shiraki, Yasuhiro b Okamoto, Tohru a

a UNIVERSITY OF TOKYO (Japan)

b TOKYO CITY UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; ELECTRON ENERGY LOSS SPECTROSCOPY; FERROMAGNETISM; HEALTH; NANOSTRUCTURED MATERIALS; QUANTUM CHEMISTRY; SILICON; TRANSPORT PROPERTIES; TWO DIMENSIONAL;

AMERICAN PHYSICAL SOCIETY (APS); CURRENT VOLTAGE (I V) CHARACTERISTICS; ELECTRONIC TRANSPORT PROPERTIES (ETP); FERROMAGNET (FM); HIGH MOBILITY; LANDAU LEVEL (LL); LOW TEMPERATURE (LTR); MAGNETO TRANSPORT PROPERTIES; MEAN FIELDS; PEAK POSITIONS; PSEUDO SPIN; QUANTUM HALL; QUANTUM WELLS; STRONG ANISOTROPY; TWO DIMENSIONAL ELECTRON SYSTEM (2DES);

CURRENT VOLTAGE CHARACTERISTICS;

EID: 46949090766 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.101.016805 Document Type: Article

Times cited : (11)

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