Spin-on doping of porous silicon and its effect on photoluminescence and transport characteristics

Applied Physics Letters

Volumn 70, Issue 17, 1997, Pages 2253-2255

  Sen, S ^a,b   Siejka, J ^a,c   Savtchouk, A ^a,d   Lagowski, J ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c SORBONNE UNIVERSITÉ   (France)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001411808     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118830     Document Type: Article

References (6)

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4. C. Peng, P. M. Fauchet, J. M. Rehm, G. L. Mclendon, F. Seiferth, and S. K. Kurinec, Appl. Phys. Lett. 64, 1259 (1994).
5. S. Shih, C. Tsai, K.-H. Li, K. H. Jung, J. C. Cambell, and D. L. Kwong, Appl. Phys. Lett. 60, 633 (1992).
6. T. Ito, H. Kiyama, T. Yasumatsu, H. Watabe, and A. Hiraki, Physica B 170, 535 (1991).