Porous silicon as low-dimensional host material for erbium-doped structures

Thin Solid Films

Volumn 297, Issue 1-2, 1997, Pages 48-52

  Bondarenko, V ^a   Dolgyi, L ^a   Dorofeev, A ^a   Kazuchits, N ^a   Leshok, A ^a   Troyanova, G ^a   Vorozov, N ^a   Maiello, G ^b   Masini, G ^c   La Monica, S ^b   Ferrari, A ^b  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

^c ROMA TRE UNIVERSITY   (Italy)

Author keywords

Erbium; Host material; Silicon

Indexed keywords

ANNEALING; ELECTRODEPOSITION; ERBIUM; LIGHT EMITTING DIODES; LUMINESCENCE; OPTICAL WAVEGUIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

ERBIUM DOPED STRUCTURES; HOST MATERIAL; LOW DIMENSIONAL MATRIX;

POROUS SILICON;

EID: 0031120258     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09429-1     Document Type: Article

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