Strong 1.54 μm luminescence from erbium-doped porous silicon

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 171-174

  Dorofeev, A ^a   Bachilo, E ^a   Bondarenko, V ^a   Gaponenko, N ^a   Kazuchits, N ^a   Leshok, A ^a   Troyanova, G ^a   Vorozov, N ^a   Borisenko, V ^a   Gnaser, H ^b   Bock, W ^b   Becker, P ^b   Oechsner, H ^b  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b Universität Kaiserslautern ^*  (Germany)

Author keywords

Deposition process; Electrochemistry; Erbium; Luminescence

Indexed keywords

DOPING (ADDITIVES); ELECTROCHEMISTRY; ELECTRODEPOSITION; ENERGY GAP; ERBIUM; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SILICA GEL;

FULL WIDTH AT HALF MAXIMUM;

POROUS SILICON;

EID: 0030120401     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08082-1     Document Type: Article

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