The RHEED tracking of the droplet epitaxial grown quantum dot and ring structures

Materials Science and Engineering: B

Volumn 165, Issue 1-2, 2009, Pages 118-121

  Nemcsics, Á ^a,b   Heyn, Ch ^c   Stemmann, A ^c   Schramm, A ^c   Welsch, H ^c   Hansen, W ^c  

^a Institute for Microelectronics and Technology   (Hungary)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c UNIVERSITY OF HAMBURG   (Germany)

Author keywords

Droplet epitaxy; GaAs; Quantum dot; Quantum ring; RHEED

Indexed keywords

DROPS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; NANOCRYSTALS; NANORINGS; SEMICONDUCTING GALLIUM;

DROPLET EPITAXY; NANO-METER-SCALE; QUANTUM DOT; QUANTUM DOT STRUCTURE; QUANTUM DOTS AND RINGS; QUANTUM OBJECT; QUANTUM RING; RINGS STRUCTURE; STRAIN-FREE; TEMPORAL EVOLUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 71749098027     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.02.015     Document Type: Article

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