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Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 610, Issue 1, 2009, Pages 311-313

Optoelectronic performance of GaN-based UV photodetectors

(5) Calvani, P a Girolami, M a Carta, S a Rossi, M C a Conte, G a

a ROMA TRE UNIVERSITY (Italy)

Author keywords

GaN photodetector; Schottky diode

Indexed keywords

BARRIER LOWERING; CARRIER TRAPPING; CHOPPING FREQUENCY; DEFECTS AND IMPURITIES; DISPERSIVE BEHAVIORS; EXPONENTIAL INCREASE; GAN FILM; OPTOELECTRONIC CHARACTERISTICS; PHOTOEFFECT; RESPONSIVITY; SAPPHIRE SUBSTRATES; SCHOTTKY DIODE; SCHOTTKY DIODES; SPACE CHARGE REGIONS; STRUCTURAL DEFECT; UV PHOTODETECTORS; WORKING FREQUENCY; YIELD MEASUREMENT;

CHARGE TRAPPING; CORUNDUM; DIODES; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 71749084868 PISSN: 01689002 EISSN: None Source Type: Journal
DOI: 10.1016/j.nima.2009.05.095 Document Type: Article

Times cited : (9)

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