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Volumn 518, Issue 4, 2009, Pages 1326-1331

Annealing effects on the structural, electrical and H2 sensing properties of transparent ZnO thin films, grown by pulsed laser deposition

Author keywords

Atomic force microscopy (AFM); Hall effect; Heat treatment; Hydrogen; Pulsed laser deposition (PLD); Sensors; Structural properties; Zinc oxide (ZnO)

Indexed keywords

ANNEALING EFFECTS; ATOMIC FORCE MICROSCOPY (AFM); CONSTANT TEMPERATURE; CRYSTALLINITIES; DEPOSITION TECHNIQUE; GAS SENSING CHARACTERISTICS; HYDROGEN CONCENTRATION; OPERATING TEMPERATURE; OXYGEN DEFICIENCY; POST ANNEALING; POSTDEPOSITION HEAT TREATMENT; REACTIVE PULSED LASER DEPOSITION; SENSING PROPERTY; STRUCTURAL INVESTIGATION; TRANSPARENT THIN FILM; ZINC OXIDE THIN FILMS; ZNO; ZNO THIN FILM;

EID: 71649103596     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.156     Document Type: Article
Times cited : (22)

References (25)
  • 16
  • 17
    • 33751221295 scopus 로고    scopus 로고
    • Sun, et al. Appl. Surf. Sci. 253 (2006) 2066
    • (2006) Appl. Surf. Sci. , vol.253 , pp. 2066
    • Sun1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.