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Volumn 518, Issue 4, 2009, Pages 1326-1331
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Annealing effects on the structural, electrical and H2 sensing properties of transparent ZnO thin films, grown by pulsed laser deposition
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Author keywords
Atomic force microscopy (AFM); Hall effect; Heat treatment; Hydrogen; Pulsed laser deposition (PLD); Sensors; Structural properties; Zinc oxide (ZnO)
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Indexed keywords
ANNEALING EFFECTS;
ATOMIC FORCE MICROSCOPY (AFM);
CONSTANT TEMPERATURE;
CRYSTALLINITIES;
DEPOSITION TECHNIQUE;
GAS SENSING CHARACTERISTICS;
HYDROGEN CONCENTRATION;
OPERATING TEMPERATURE;
OXYGEN DEFICIENCY;
POST ANNEALING;
POSTDEPOSITION HEAT TREATMENT;
REACTIVE PULSED LASER DEPOSITION;
SENSING PROPERTY;
STRUCTURAL INVESTIGATION;
TRANSPARENT THIN FILM;
ZINC OXIDE THIN FILMS;
ZNO;
ZNO THIN FILM;
ANNEALING;
ATOMIC FORCE MICROSCOPY;
ATOMS;
DEPOSITION;
GAS SENSING ELECTRODES;
GYRATORS;
HALL EFFECT;
HYDROGEN;
LASERS;
MAGNETIC FIELD EFFECTS;
OXYGEN;
PROGRAMMABLE LOGIC CONTROLLERS;
PULSED LASER DEPOSITION;
SEMICONDUCTING ZINC COMPOUNDS;
SENSORS;
THERMAL EFFECTS;
THIN FILMS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
ZINC;
ZINC OXIDE;
OXIDE FILMS;
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EID: 71649103596
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.02.156 Document Type: Article |
Times cited : (22)
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References (25)
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