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An electrothermal model for AIGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR
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O. Jardel , F. De Groote, T. Reveyrand, J-C. Jacquet , C. Charbonniaud, J-P. Teyssier, D. Floriot and R. Quéré, "An electrothermal model for AIGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR," IEEE Transactions on Microwave Theory and Techniques, vol. 55, pp. 2660-2669, Dec. 2007.
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