Atomic structure of the non-polar GaN(2̄110) surface by cross-sectional scanning tunneling microscopy

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 4, 2009, Pages 91-93

  Krüger, David ^a   Kuhr, Simon ^a   Schmidt, Thomas ^a   Hommel, Detlef ^a   Falta, Jens ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC ARRANGEMENT; ATOMIC STRUCTURE; BULK STRUCTURE; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; EXPERIMENTAL DATA; MESH SIZE; NON-POLAR GAN; PERIOD LENGTH;

GALLIUM ALLOYS; GALLIUM NITRIDE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; WIND TUNNELS;

CRYSTAL ATOMIC STRUCTURE;

EID: 71149108662     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903041     Document Type: Article

References (15)

1. I. Akasaki and H. Amano, Jpn. J. Appl. Phys. 36, 5393 (1997).
2. S. Nakamura et al., The Blue Laser Diode - The Complete Story, 2nd ed. (Springer, Berlin, 2000), p. 386.
3. T. Takeuchi et al., Jpn. J. Appl. Phys. 36, L382 (1997).
4. A. Chakraborty et al., Jpn. J. Appl. Phys. 44, L137 (2005).
5. K. Okamoto et al., Jpn. J. Appl. Phys. 46, L187 (2007).
6. M. C. Schmidt et al., Jpn. J. Appl. Phys. 46, L190 (2007).
7. R. M. Feenstra and A. P. Fein, Phys. Rev. B 32, 1394 (1985).
8. O. Albrektsen et al., Appl. Phys. Lett. 57, 31 (1990).
9. A. R. Smith et al., Appl. Phys. Lett. 66, 478 (1995).
10. N. Liu et al., Phys. Rev. Lett. 84, 334 (2000).
11. N. Liu et al., Appl. Phys. Lett. 80, 4345 (2002).
12. A. Lenz et al., Appl. Phys. Lett. 85, 3848 (2004).
13. Q. Gong et al., Appl. Phys. Lett. 85, 5697 (2004).
14. P. Zahl et al., Rev. Sci. Instrum. 74, 1222 (2003).
15. J. E. Northrup and J. Neugebauer, Phys. Rev. B 53, R10477 (1996).