Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 10, 2009, Pages 2217-2221

  Zhou, D ^a   Piron, R ^a   Dontabactouny, M ^a   Homeyer, E ^a   Dehaese, O ^a   Batte, T ^a   Gicquel, M ^a   Grillot, F ^a   Tavernier, K ^a   Even, J ^a   Loualiche, S ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE ZONE; EMISSION WAVELENGTH; INAS; INP SUBSTRATES; LASER PROPERTY; LASING WAVELENGTH; MINIMUM VALUE; MODAL GAIN; QD LASERS; QUANTUM DASHES; STACK-NUMBERS; STACKED LAYER;

CRYSTAL GROWTH; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOTECHNOLOGY; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM DOTS; THRESHOLD CURRENT DENSITY;

LASERS;

EID: 70949091214     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881729     Document Type: Conference Paper

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