Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures

Optics Express

Volumn 17, Issue 23, 2009, Pages 20642-20650

  Gong, Yiyang ^a   Yerci, Selçuk ^b   Li, Rui ^b   Negro, Luca Dal ^b   Vučković, Jelena ^a  

^a Stanford University   (United States)

^b Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ERBIUM; METAL INSULATOR BOUNDARIES; NANOPARTICLES; NITRIDES; PLASMONS; SILICON NITRIDE;

ERBIUM-DOPED SILICON; INTERPARTICLE DISTANCES; MATERIAL SYSTEMS; METAL-INSULATOR-METAL STRUCTURES; NITRIDE LAYERS; PLASMONIC RESONANCES; POLARIZATION BEHAVIOR; RESONANT ENHANCEMENTS;

METALS;

EID: 70749125881     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.020642     Document Type: Article

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