Possibility of transport through a single acceptor in a gate-all-around silicon nanowire PMOSFET

IEEE Transactions on Nanotechnology

Volumn 8, Issue 6, 2009, Pages 713-717

  Hong, Byoung Hak ^a   Jung, Young Chai ^a   Rieh, Jae Sung ^a   Hwang, Sung Woo ^a   Cho, Keun Hwi ^b   Yeo, K H ^b   Suk, S D ^b   Yeoh, Y Y ^b   Li, M ^b   Kim, Dong Won ^b   Park, Donggun ^b   Oh, Kyung Seok ^b   Lee, Won Seong ^b  

^a Korea University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Gate all around (GAA); Silicon nanowire FET (SNWFET); Single acceptor atom; Temperature dependence

Indexed keywords

BOHR RADIUS; BORON ATOM; BOUND-STATE ENERGIES; CHARGING ENERGIES; CURRENT OSCILLATION; CURRENT PEAK; ELECTRICAL TRANSPORT MEASUREMENTS; GATE-ALL-AROUND; MOS-FET; PMOSFET; QUANTUM DOT; ROOM TEMPERATURE; SILICON NANOWIRE FET (SNWFET); SILICON NANOWIRE FETS; SILICON NANOWIRES; SINGLE HOLE; STRONG CURRENTS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

ATOMS; BORON; BORON COMPOUNDS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; MESFET DEVICES; MOSFET DEVICES; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE DISTRIBUTION; TUNNELING (EXCAVATION); WIND TUNNELS;

ELECTRIC WIRE;

EID: 70749103155     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2021844     Document Type: Article

References (15)

1. H.-S. Wong and Y. Taur, "Three dimensional 'atomistic' simulation of discrete random dopants distribution effects in sub-0.1 μm MOSFETs," in IEDM Tech. Dig., 1993, pp. 705-708.
2. L. E. Calvet, R. G. Wheeler, and M. A. Reed, "Effect of local strain on single acceptors in Si," Phys. Rev. B, vol.76, pp. 035319-1-035319-6, 2007.
3. M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara, "Identification of single and coupled acceptor in silicon nano-field effect transistor," Appl. Phys. Lett., vol.91, pp. 263513-1-263513-3, 2007.
4. C. Ryou, S. W. Hwang, H. Shin, C. H. Lee, Y. J. Park, and H. S. Min, "Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs," Solid-State Electron., vol.45, pp. 1165-1172, 2001.
5. H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans, "Transport sepctroscopy of a single dopant in a gated silicon nanowire," Phys. Rev. Lett., vol.97, pp. 206805-1- 206805-4, 2006.
6. G. P. Lansbergen, R. Rahman, C. J. Wellard, I. Woo, J. Caro, N. Collaert, S. Biesemans, G. Klimeck, L. C.Hollenberg, and S. Rogge, "Gate-induced quantum-confinement transition of a single dopant atom in a silicon Fin- FET," Nature Phys., vol.4, pp. 656-661, 2008.
7. Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi, "Conductance modulation by individual acceptors in Si nanoscale field-effect transistors," Appl. Phys. Lett., vol.90, pp. 102106- 1-102106-3, Aug. 2007.
8. L. E. Calvet, R. G. Wheeler, and M. A. Reed, "Observation of the linear stark effect in a single acceptor in Si," Phys. Rev. Lett., vol.98, pp. 096805- 1-096805-4, 2007.
9. F.-L. Yang, D.-H. Lee, H.-Y. Chen, C.-Y. Chang, S.-D. Liu, C.-C. Huang, T.-X. Chung, H.-W. Chen, C.-C. Huang, Y.-H. Liu, C.-C.Wu, C.-C. Chen, S.-C. Chen, Y.-T. Chen, Y.-H. Chen, C.-J. Chen, B.-W. Chan, P.-F. Hsu, J.-H. Shieh, H.-J. Tao, Y.-C. Yeo, Y. Li, J.-W. Lee, P. Chen, M.-S. Liang, and C. Hu, "5 nm-gate nanowire FinFET," in Proc. Symp. VLSI Tech., 2004, pp. 196-197.
10. S. D. Suk, S.-Y. Lee, S.-M. Kim, E.-J Yoon, M.-S. Kim, M. Li, C. W. Oh, K. H. Yeo, S. H. Kim, D.-S. Shin, K.-H. Lee, H. S. Park, J. N. Han, C. J. Park, J.-B. Park, D.-W. Kim, D. Park, and B.-I. Ryu, "High performance 5 nm radius twin silicon nanowire MOSFET (TSNWFET): Fabrication on bulk Si wafer, characteristics, and reliability," in IEDM Tech. Dig., 2005, pp. 717-720.
11. K. H. Cho, S. D. Suk, Y. Y. Yeoh, M. Li, K. H. Yeo, D.-W. Kim, S.W. Hwang, D. Park, and B.-I. Ryu, "MOSFETs fabricated by top-down CMOS process," in IEDM Tech. Dig., 2006, pp. 543-546.
12. K. H. Cho, Y. C. Jung, B. H. Hong, S. W. Hwang, J. H. Oh, D. Ahn, S. D. Suk, K. H. Yeo, D.-W. Kim, D. Park, and W.-S. Lee, "Observation of three-dimensional shell filling in cylindrical silicon nanowire single electron transistors," Appl. Phys. Lett., vol.90, pp. 182102-1-182102-3, 2007.
13. K. H. Cho, S. D. Suk, Y. Y. Yeoh, M. Li, K. H. Yeo, D.-W. Kim, D. Park, W.-S Lee, Y. C. Jung, B. H. Hong, and S. W. Hwang, "Temperaturedependent characteristics of cylindrical gate-all-around (GAA) twin silicon nanowire MOSFETs (TSNWFETs)," IEEE Electron Device Lett., vol.28, no.12, pp. 1129-1131, Dec. 2007.
14. H. R. Chandrasekhar, A. K. Ramdas, and S. Rodriguez, "Resonant interaction of acceptor states with optical phonons in silicon," Phys. Rev. B, vol.14, pp. 2417-2421, 1976.
15. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, "Room-temperature ultraviolet nanowire nanolasers," Science, vol.292, no.5523, pp. 1897-1899, 2001.