Confinement-enhanced dots-in-a-well QDIPs with operating temperature over 200 K

Infrared Physics and Technology

Volumn 52, Issue 6, 2009, Pages 281-284

  Ling, H S ^a   Wang, S Y ^b   Lee, C P ^a   Lo, M C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF ASTRONOMY AND ASTROPHYSICS   (Taiwan)

Author keywords

DWELL; Infrared detector; Intersubband; LWIR; Photodetector; Quantum dot

Indexed keywords

BARRIER LAYERS; DETECTIVITY; DEVICE PARAMETERS; DEVICE PERFORMANCE; DOTS IN A WELLS; ESCAPE PROBABILITY; EXCITED-STATE ENERGY; HIGH OPERATING TEMPERATURE; HIGH QUANTUM EFFICIENCY; INAS; INTER-SUBBAND; LONG WAVELENGTH; LWIR; OPERATING TEMPERATURE; OPERATION TEMPERATURE; ORDER OF MAGNITUDE; OSCILLATOR STRENGTHS; QUANTUM DOT;

DETECTORS; GALLIUM; INDIUM ARSENIDE; INFRARED DETECTORS; OPTOELECTRONIC DEVICES; OSCILLATORS (ELECTRONIC); SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE;

QUANTUM EFFICIENCY;

EID: 70649112347     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2009.05.026     Document Type: Article

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